PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
This work presents a study of the influence of
different gate driver circuits on the switching behavior and EMI
produced by SiC MOSFET devices used in a boost converter.
The paper includes several simulations of switching behavior
using different VGS voltage levels and different passive RCD
(Resistance Capacitor Diode) circuits to interface the driver to
the SiC MOS gate and several tests of conducted and radiated
EMI for each one of the interface circuits. The paper also
includes a comparison of both aspects (switching and EMI) when
using different gate voltage levels.
The study reveals that gate voltage has little impact on
switching behavior and therefore on conducted and radiated
EMI, while gate RCD coupling circuits have a noticeable impact.
The EMI reduction, when using the adequate driver-gate circuit
may be in the order of 10 dB at certain frequencies in the
conducted band and up to 20 dB for certain frequencies in the
CitationBalcells, J.; Bogonez, F. Effect of driver to gate coupling circuits on EMI produced by SiC MOSFETS. A: International Symposium on Electromagnetic Compatibility. "Proceedings of the 2013 International Symposium on Electromagnetic Compatibility.". Brugge: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 209-214.
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