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dc.contributor.authorColina Brito, Mónica Alejandra
dc.contributor.authorMolpeceres Alvarez, Carlos
dc.contributor.authorHolgado, Miguel
dc.contributor.authorGandía, Javier
dc.contributor.authorNos, Oriol
dc.contributor.authorOcaña, José L.
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2013-10-18T12:53:11Z
dc.date.created2010-04-14
dc.date.issued2010-04-14
dc.identifier.citationColina, M.A. [et al.]. Study of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications. "Thin solid films", 14 Abril 2010, vol. 518, núm. 18, p. 5331-5339.
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/2117/20421
dc.description.abstractLaser scribing of hydrogenated amorphous silicon (a-Si:H) is a crucial step in the fabrication of thin film photovoltaic modules. During such process, inherent thermo-mechanical effects associated to laser ablation mechanisms lead to thermal damages. In that sense, the state of the material remaining in the vicinity of the ablated area has a critical influence on the electrical properties of the final devices. In this work, a comprehensive analysis of refractive index variations for the material surrounding the ablated area by means of Infrared–Visible Fourier transform spectrometry is proposed. Besides, in order to evaluate the material microstructure, Raman spectroscopy is employed as a complimentary technique. It was seen that the refractive index variation decreased as the distance from the center of the ablated groove was increased. Likewise, a clear transition from highly crystalline to amorphous material could be also observed as a function of the distance from the groove.
dc.format.extent9 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica
dc.subject.lcshPhotovoltaic cells
dc.subject.lcshPhotovoltaic power generation.
dc.titleStudy of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications
dc.typeArticle
dc.subject.lemacEnergia solar -- Aparells i accessoris
dc.subject.lemacSilicones
dc.subject.lemacBateries solars
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.tsf.2010.04.016
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0040609010005389#
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac12662743
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorColina, M.A.; Molpeceres, C.; Holgado, M.; Gandía, J.; Nos, O.; Ocaña, J.
local.citation.publicationNameThin solid films
local.citation.volume518
local.citation.number18
local.citation.startingPage5331
local.citation.endingPage5339


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