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Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process
dc.contributor.author | Boronat Moreiro, Alfredo |
dc.contributor.author | Silvestre Bergés, Santiago |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2013-09-16T15:11:10Z |
dc.date.available | 2013-09-16T15:11:10Z |
dc.date.created | 2013-09-12 |
dc.date.issued | 2013-09-12 |
dc.identifier.citation | Boronat, A.; Silvestre, S.; Orpella, A. Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process. "Journal of Vacuum Science and Technology B", 12 Setembre 2013, vol. 31, núm. 5, p. 051209-1-051209-7. |
dc.identifier.issn | 2166-2746 |
dc.identifier.uri | http://hdl.handle.net/2117/20142 |
dc.description.abstract | A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing process and the electrical response of the metal–semiconductor contact are characterized. |
dc.language.iso | eng |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica |
dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica |
dc.subject.lcsh | Temperature measurements |
dc.subject.lcsh | Photonics |
dc.subject.other | GaAs |
dc.subject.other | ohmic contact |
dc.subject.other | laser firing |
dc.title | Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process |
dc.type | Article |
dc.subject.lemac | Termometria |
dc.subject.lemac | Fotònica |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1116/1.4820912 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://avspublications.org/jvstb/resource/1/jvtbd9/v31/i5/p051209_s1 |
dc.rights.access | Open Access |
local.identifier.drac | 12761715 |
dc.description.version | Postprint (published version) |
local.citation.author | Boronat, A.; Silvestre, S.; Orpella, A. |
local.citation.publicationName | Journal of Vacuum Science and Technology B |
local.citation.volume | 31 |
local.citation.number | 5 |
local.citation.startingPage | 051209-1 |
local.citation.endingPage | 051209-7 |
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