Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process
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A novel approach is used to achieve ohmic contacts on moderately doped p-type GaAs substrates. A laser-firing process is used instead of the conventional annealing step. The morphology of the crater created by the laser-firing process and the electrical response of the metal–semiconductor contact are characterized.
CitationBoronat, A.; Silvestre, S.; Orpella, A. Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing process. "Journal of Vacuum Science and Technology B", 12 Setembre 2013, vol. 31, núm. 5, p. 051209-1-051209-7.