Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors
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This work aims at showing a new approach for determining the efficiency of linear class A RF power amplifiers by means of non-invasive, steady-state thermal monitoring. The theoretical basis of the technique is indicated and its suitability in a real case application scenario is presented. More in detail, silicon surface thermal monitoring is performed with built-in sensors and infrared measurements on an RF power amplifier. The first monitoring circuit consists of differential sensors, which can be used for contact-less on-line efficiency monitoring or to easy production testing. The obtained results are corroborated by means of Infrared measurements. Off-chip temperature sensors have applications in failure analysis or circuit debugging scenarios. As a result, we observe a good agreement between the efficiency predicted with the thermal measurements (less than 5% of error) when compared to values measured with standard electrical equipment.
CitacióAltet, J. [et al.]. Efficiency determination of RF linear power amplifiers by steady-state temperature monitoring using built-in sensors. "Sensors and actuators A. Physical", Abril 2013, vol. 192, p. 49-57.
Versió de l'editorhttp://www.sciencedirect.com/science/article/pii/S0924424712007388
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