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Carbon nanotube FET process variability and noise model for radiofrequency investigations
| dc.contributor.author | Landauer, Gerhard Martin |
| dc.contributor.author | González Jiménez, José Luis |
| dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
| dc.date.accessioned | 2013-06-27T13:00:23Z |
| dc.date.available | 2013-06-27T13:00:23Z |
| dc.date.created | 2012 |
| dc.date.issued | 2012 |
| dc.identifier.citation | Landauer, G.M.; Gonzalez, J. Carbon nanotube FET process variability and noise model for radiofrequency investigations. A: IEEE International Conference on Nanotechnology. "2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO 2012)". Birmingham: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 1-5. |
| dc.identifier.isbn | 978-1-4673-2198-3 |
| dc.identifier.uri | http://hdl.handle.net/2117/19701 |
| dc.description.abstract | This work focuses on process variability and noise in carbon nanotube field-effect transistors (CNFET) to obtain a compact model usable for radiofrequency (RF) design and simulations. CNFET figures of merit (FoM) are determined and compared to International Technology Roadmap for Semiconductors (ITRS) requirements on conventional analog silicon-based devices. The developed model is also used to investigate on the impact of manufacturing process variability on the CNFET's RF-performance and noise behavior. |
| dc.format.extent | 5 p. |
| dc.language.iso | eng |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
| dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
| dc.subject.lcsh | Nanoelectronics. |
| dc.subject.lcsh | Field-effect transistors. |
| dc.subject.other | TRANSISTORS INCLUDING NONIDEALITIES |
| dc.subject.other | COMPACT SPICE MODEL |
| dc.subject.other | PART II |
| dc.subject.other | PERFORMANCE |
| dc.title | Carbon nanotube FET process variability and noise model for radiofrequency investigations |
| dc.type | Conference report |
| dc.subject.lemac | Nanotubs |
| dc.subject.lemac | Transistors d'efecte de camp |
| dc.contributor.group | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
| dc.relation.publisherversion | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6321963 |
| dc.rights.access | Restricted access - publisher's policy |
| local.identifier.drac | 11149324 |
| dc.description.version | Postprint (published version) |
| dc.date.lift | 10000-01-01 |
| local.citation.author | Landauer, G.M.; Gonzalez, J. |
| local.citation.contributor | IEEE International Conference on Nanotechnology |
| local.citation.pubplace | Birmingham |
| local.citation.publicationName | 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO 2012) |
| local.citation.startingPage | 1 |
| local.citation.endingPage | 5 |