Carbon nanotube FET process variability and noise model for radiofrequency investigations
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
This work focuses on process variability and noise in carbon nanotube field-effect transistors (CNFET) to obtain a compact model usable for radiofrequency (RF) design and simulations. CNFET figures of merit (FoM) are determined and compared to International Technology Roadmap for Semiconductors (ITRS) requirements on conventional analog silicon-based devices. The developed model is also used to investigate on the impact of manufacturing process variability on the CNFET's RF-performance and noise behavior.
CitationLandauer, G.M.; Gonzalez, J. Carbon nanotube FET process variability and noise model for radiofrequency investigations. A: IEEE International Conference on Nanotechnology. "2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO 2012)". Birmingham: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 1-5.
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