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A high dynamic-range RF programmable-gain front end for G.hn RF-Coax in 65-nm CMOS
dc.contributor.author | Trulls Fortuny, Xavier |
dc.contributor.author | Mateo Peña, Diego |
dc.contributor.author | Bofill, Adrià |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2013-05-30T14:20:55Z |
dc.date.created | 2012-10 |
dc.date.issued | 2012-10 |
dc.identifier.citation | Trulls, X.; Mateo, D.; Bofill, A. A high dynamic-range RF programmable-gain front end for G.hn RF-Coax in 65-nm CMOS. "IEEE transactions on microwave theory and techniques", Octubre 2012, vol. 60, núm. 10, p. 3243-3253. |
dc.identifier.issn | 0018-9480 |
dc.identifier.uri | http://hdl.handle.net/2117/19463 |
dc.description.abstract | A high-dynamic-range programmable-gain inductorless RF front end suitable for the RF-coax bandplan of the G.hn recommendation is presented. A double-input RF programmable gain amplifier (DI-RFPGA) with switchable capacitive attenuation providing four gain settings is used at the input, followed by a current reuse transconductance amplifier (CR-TCA) and a switching stage for frequency downconversion. Besides the gain configurability provided by the DI-RFPGA, the front end adds an additional configuration mechanism by allowing the bypass of the CR-TCA, connecting the DI-RFPGA directly to the switching stage, and thereby providing a total of eight gain settings. The different sets of specifications result in a signal-to-noise-plus-distortion ratio larger than 37 dB for an input power range from 78 to 5 dBm with a bandwidth from 300 MHz to 2.5 GHz. The chip is fabricated in a 65-nm CMOS technology and consumes between 31.8–46.8 mW. The RF front end achieves a voltage gain range of 39.2 dB, with a maximum voltage gain of 25.2 dB, a minimum noise figure of 5.5 dB, and a maximum third-order intermodulation intercept point of 24.2 dBm. The circuit occupies a total area of 0.119 mm. |
dc.format.extent | 11 p. |
dc.language.iso | eng |
dc.publisher | IEEE Microwave Theory and Techniques Society |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques |
dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica |
dc.subject.lcsh | Microwaves |
dc.subject.lcsh | Radio frequency |
dc.title | A high dynamic-range RF programmable-gain front end for G.hn RF-Coax in 65-nm CMOS |
dc.type | Article |
dc.subject.lemac | Microones |
dc.subject.lemac | Radiofreqüència |
dc.contributor.group | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
dc.identifier.doi | 10.1109/TMTT.2012.2207913 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6252018 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 12441805 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Trulls, X.; Mateo, D.; Bofill, A. |
local.citation.publicationName | IEEE transactions on microwave theory and techniques |
local.citation.volume | 60 |
local.citation.number | 10 |
local.citation.startingPage | 3243 |
local.citation.endingPage | 3253 |
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