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dc.contributor.authorTrulls Fortuny, Xavier
dc.contributor.authorMateo Peña, Diego
dc.contributor.authorBofill, Adrià
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2013-05-30T14:20:55Z
dc.date.created2012-10
dc.date.issued2012-10
dc.identifier.citationTrulls, X.; Mateo, D.; Bofill, A. A high dynamic-range RF programmable-gain front end for G.hn RF-Coax in 65-nm CMOS. "IEEE transactions on microwave theory and techniques", Octubre 2012, vol. 60, núm. 10, p. 3243-3253.
dc.identifier.issn0018-9480
dc.identifier.urihttp://hdl.handle.net/2117/19463
dc.description.abstractA high-dynamic-range programmable-gain inductorless RF front end suitable for the RF-coax bandplan of the G.hn recommendation is presented. A double-input RF programmable gain amplifier (DI-RFPGA) with switchable capacitive attenuation providing four gain settings is used at the input, followed by a current reuse transconductance amplifier (CR-TCA) and a switching stage for frequency downconversion. Besides the gain configurability provided by the DI-RFPGA, the front end adds an additional configuration mechanism by allowing the bypass of the CR-TCA, connecting the DI-RFPGA directly to the switching stage, and thereby providing a total of eight gain settings. The different sets of specifications result in a signal-to-noise-plus-distortion ratio larger than 37 dB for an input power range from 78 to 5 dBm with a bandwidth from 300 MHz to 2.5 GHz. The chip is fabricated in a 65-nm CMOS technology and consumes between 31.8–46.8 mW. The RF front end achieves a voltage gain range of 39.2 dB, with a maximum voltage gain of 25.2 dB, a minimum noise figure of 5.5 dB, and a maximum third-order intermodulation intercept point of 24.2 dBm. The circuit occupies a total area of 0.119 mm.
dc.format.extent11 p.
dc.language.isoeng
dc.publisherIEEE Microwave Theory and Techniques Society
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica
dc.subject.lcshMicrowaves
dc.subject.lcshRadio frequency
dc.titleA high dynamic-range RF programmable-gain front end for G.hn RF-Coax in 65-nm CMOS
dc.typeArticle
dc.subject.lemacMicroones
dc.subject.lemacRadiofreqüència
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.identifier.doi10.1109/TMTT.2012.2207913
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6252018
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac12441805
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorTrulls, X.; Mateo, D.; Bofill, A.
local.citation.publicationNameIEEE transactions on microwave theory and techniques
local.citation.volume60
local.citation.number10
local.citation.startingPage3243
local.citation.endingPage3253


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