ventional way to analyze the robustness of an
SRAM bit cell is to quantify its immunity to static noise. The static immunity to disturbances like process and mi smatch variations, bulk noises, supply rings variations, temperature changes is well characterized by means of the Static Noise
Margin (SNM) defined as the maximum applicable series voltage at the inputs which causes no change in the data retention nodes.
However, a significant number of disturbance sources present a transient behavior which is ignored by the static analysis but has
to be taken in consideration for a complete characterization of the cell’s behavior. In this paper, a metric to evaluate the cell
robustness in the presence of transient voltage noise is proposed based on determining the energy of the noise signal
which is able to flip the cell’s state. The Dynamic Noise Margin(DNM) metric is defined as the minimum energy of the voltage noise signal able to flip the cell.
Citació, E. [et al.]. SRAM stability metric under transient noise. A: Design of Circuits and Integrated Systems Conference. "Proceedings of XXVIIth Conference on Design of Circuits and Integrated Systems". Avignon: 2012.