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In the present paper we analyze that DC temperature
measurements of the silicon surface can be used to monitor the
high frequency status and performances of class A RF Power
Amplifiers. As a proof of concept, we present experimental results
obtained with a 65 nm CMOS IC that contains a 2GHz linear
class A Power Amplifier and a very simple differential
temperature sensor. Results show that the PA output power can
be tracked from DC temperature measurements.
CitationAltet, J.; Mateo, D.; Gómez, D. On line monitoring of RF power amplifiers with embedded temperature sensors. A: IEEE International On-Line Testing Symposium. "2012 IEEE 18th International On-Line Testing Symposium (IOLTS), Sitges, Spain, June 27-29, 2012". Sitges, Barcelona: IEEE, 2012, p. 1-5.
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