This paper presents an original study about the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences (EMI) on a nanometric NMOS transistor, which is one of the major sources of failures in analog circuits. Measurements and simulations based on a simple model (Sakurai-Newton model) of fresh and stressed transistors are presented showing significant variations of EMI-induced DC shifts of drain current.
CitationLi, B. [et al.]. Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences. A: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. "Proceedings European Symposium on Reliability of Electron Devices, Failure Physics and Analysis". 2011.
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