Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario
Document typeConference report
Rights accessRestricted access - publisher's policy
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. New nanoscale beyond-CMOS devices are being studied such as carbon nanotubes (CNTs). The goal of this paper is to evaluate the parameter variability in Carbon Nanotube Field Effect Transistors (CNFETs) and its potential capability to be a promising alternative to Si-CMOS technology. The impact of the carbon nanotube diameter variations as well as the presence of metallic carbon nanotubes in the transistor are analyzed (device level). This variability model is used to make a comparison between Si-MOSFET and CNFET Static Random Access Memory (SRAM) 6T cells (circuit level).
CitationGarcía, C.; Rubio, J. Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario. A: IEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems. "Proceedings IEEE Design and Diagnosis of Electronic Circuits and Systems". Cottbus: 2011, p. 249-254.
|Ses5B-1.pdf||DDECS'11 Carmen García||1.253Mb||Restricted access|