PublisherIEEE Press. Institute of Electrical and Electronics Engineers
Rights accessRestricted access - publisher's policy
In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. Novel nanoscale beyond- CMOS devices are being studied such as carbon nanotubes (CNTs). The goal of this paper is to evaluate the parameter variability in Carbon Nanotube Field Effect Transistors (CNFETs) and their potential capability to be a promising alternative to Si-CMOS technology.
CitationGarcía, C.; Rubio, J. Carbon nanotube growth process-related variablity in CNFET's. A: IEEE conference in Nanotechnology. "Proceedings IEEE NANO 2011". Portland: IEEE Press. Institute of Electrical and Electronics Engineers, 2011, p. 1084-1087.
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