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Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), the device variability is also present and is mainly due to imperfections inherent in current carbon nanotube (CNT) growth methods. The goal of this paper is to evaluate the impact of the main sources of variability in conventional MOSFET and CNFET 6T SRAM cells through the consideration of random threshold voltage process variations.
CitationGarcía, C.; Rubio, J. A comparative variability analysis for CMOS and CNFET 6T SRAM cells. A: IEEE International Midwest Symposium on Circuits and Systems. "International Midwest Symposium on Circuits and Systems (MWSCAS)". 2011, p. 1-4.
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