In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI). The impact of pFET under NBTI has been experimentally quantified whereas CMOS ring oscillator frequency and the switching noise has been analysed by means of electrical full-model simulation. The results show that the impact on the electromagnetic compatibility behaviour increases with NBTI wearout.
CitationFernandez, R. [et al.]. Ring oscillator switching noise under NBTI wearout. A: International Symposium on Electromagnetic Compatibility (EMC Europe). "EMC Europe 2011". York: 2011, p. 294-297.
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