| Títol: | Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout |
| Autor: | Berbel Artal, Néstor
Fernández García, Raúl
Gil Galí, Ignacio
Li, B.
Boyer, A.
BenDhia, S. |
| Altres autors/autores: | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
| Matèries: | Àrees temàtiques de la UPC::Enginyeria electrònica i telecomunicacions::Electrònica de potència
Metal oxide semiconductor field-effect transistors
Electromagnetism
Electromagnetisme |
| Tipus de document: | Article |
| Descripció: | In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted for each sample. The results show that the model can reproduce the MOSFET behavior under HCI wearout mechanism. Therefore, the impact of HCI on circuits can be analyzed by using the nth power law MOSFET model. |
| Altres identificadors i accés: | Berbel, N. [et al.]. Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout. "Microelectronics reliability", 16 Setembre 2011, vol. Volume 51, núm. Issue 9 - 11, p. 1564-1567.
0026-2714
http://hdl.handle.net/2117/13917
10.1016/j.microrel.2011.06.041 |
| Disponible al dipòsit: | E-prints UPC
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