Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwave applications. Unfortunately, there are few large-signal models available for MODFETs, and determining the parameters of these models at high power levels is often difficult. A good large-signal model can be obtained from small-signal measurements that require relatively common microwave instrumentation. The authors explain how small-signal measurements of various bias points yield a useful nonlinear equivalent circuit.
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