Electrical transport and impedance analysis of Au/porous silicon thin films

Fonthal, Faruk; Goyes, C; Rodríguez Martínez, Ángel

doi:10.1109/CERMA.2008.62

dc.contributor.author	Fonthal, Faruk
dc.contributor.author	Goyes, C
dc.contributor.author	Rodríguez Martínez, Ángel
dc.contributor.other	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned	2011-03-18T13:14:11Z
dc.date.available	2011-03-18T13:14:11Z
dc.date.created	2011
dc.date.issued	2011
dc.identifier.citation	Fonthal, F.; Goyes, C.; Rodriguez, A. Electrical transport and impedance analysis of Au/porous silicon thin films. A: Electronics, Robotics and Automotive Mechanics Conference. "CERMA 2008". Cuernavaca: IEEE Press. Institute of Electrical and Electronics Engineers, 2011, p. 3-7.
dc.identifier.isbn	978-0-7695-3320-9
dc.identifier.uri	http://hdl.handle.net/2117/11958
dc.description.abstract	In order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100> substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different sample
dc.format.extent	5 p.
dc.language.iso	eng
dc.publisher	IEEE Press. Institute of Electrical and Electronics Engineers
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject.classification	Electronic engineering
dc.subject.lcsh	Porous Silicon
dc.subject.lcsh	Electrochemical etching
dc.subject.lcsh	Electrical conductivity
dc.subject.lcsh	Electrical equivalent circuit
dc.subject.lcsh	Metal-semiconductor-metal structure
dc.title	Electrical transport and impedance analysis of Au/porous silicon thin films
dc.type	Conference report
dc.subject.lemac	Enginyeria electrònica
dc.contributor.group	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi	10.1109/CERMA.2008.62
dc.relation.publisherversion	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4641038
dc.rights.access	Restricted access - author's decision
local.identifier.drac	5357284
dc.description.version	Postprint (published version)
local.citation.author	Fonthal, F.; Goyes, C.; Rodriguez, A.
local.citation.contributor	Electronics, Robotics and Automotive Mechanics Conference
local.citation.pubplace	Cuernavaca
local.citation.publicationName	CERMA 2008
local.citation.startingPage	3
local.citation.endingPage	7