Electrical transport and impedance analysis of Au/porous silicon thin films
Document typeConference report
PublisherIEEE Press. Institute of Electrical and Electronics Engineers
Rights accessRestricted access - author's decision
In order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100> substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different sample
CitationFonthal, F.; Goyes, C.; Rodriguez, A. Electrical transport and impedance analysis of Au/porous silicon thin films. A: Electronics, Robotics and Automotive Mechanics Conference. "CERMA 2008". Cuernavaca: IEEE Press. Institute of Electrical and Electronics Engineers, 2011, p. 3-7.