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A phase switch based on switching between two twoport
passive networks with a phase difference of 180º is reported.
Two RF MEMS single-pole-double-throw structures are used to
select the phase path. The fabrication is made on both highresistivity
silicon and quartz substrates using the eight-mask
FBK-irst surface micromachining process. The measured phase
shift is 180º±5º in the frequency range 14−20 GHz on quartz
wafers and in the range 8−20 Ghz on silicon wafers.
CitacióLlamas, M.A. [et al.]. RF-MEMS uniplanar 180º Phase Switch based on switching between two out-of-phase paths. A: International Conference on RF MEMS and RF Microsystems. "11th International Conference on RF MEMS and RF Microsystems - MEMSWAVE-2010". Otranto: 2011, p. 1-4.