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Extraction of an avalanche diode noise model for its application as on-wafer noise source

dc.contributor.authorMaya Sánchez, Mª del Carmen
dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2007-07-02T10:32:32Z
dc.date.available2007-07-02T10:32:32Z
dc.date.created2003
dc.date.issued2003-07-31
dc.identifier.citationMaya, M. C.; Lázaro, A.; Pradell, L. Extraction of an avalanche diode noise model for its application as on-wafer noise source. Microwave and optical technology letters, 2003, vol. 38, núm. 2, p. 89-92.
dc.identifier.issn0895-2477
dc.identifier.urihttp://hdl.handle.net/2117/1120
dc.description.abstractThis paper presents a method to characterize the excess noise ratio (ENR) of an unmatched avalanche noise diode for application as an on-wafer noise source. It is based on the determination of a broadband device noise circuit-model from its measured reflection coefficient and noise powers. Measured ENR is used to calibrated a noise receiver up to 40 GHz.
dc.format.extent89-92
dc.language.isoeng
dc.publisherJOHN WILEY & SONS INC
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject.lcshElectromagnetic noise
dc.subject.lcshMicrowaves
dc.subject.lcshDiodes, Avalanche
dc.subject.otheron-wafer noise source
dc.subject.otherexcess noise ratio
dc.subject.othersmall-signal model
dc.subject.othernoise temperature measurement
dc.subject.othernoise parameters
dc.subject.otheravalanche diodes
dc.subject.otherelectric noise measurement
dc.subject.otherelectron device noise
dc.subject.othersemiconductor device models
dc.subject.otheravalanche diode noise model
dc.subject.otherunmatched avalanche noise diode
dc.subject.otherbroadband device noise circuit-model
dc.subject.otherreflection coefficient
dc.subject.othernoise power
dc.subject.other0 to 40 GHz
dc.titleExtraction of an avalanche diode noise model for its application as on-wafer noise source
dc.typeArticle
dc.subject.lemacSoroll electromagnètic
dc.subject.lemacMicroones
dc.subject.lemacDíodes
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
local.personalitzacitaciotrue


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