This paper presents a method to characterize the excess noise ratio (ENR) of an unmatched avalanche noise diode for application as an on-wafer noise source. It is based on the determination of a broadband device noise circuit-model from its measured reflection coefficient and noise powers. Measured ENR is used to calibrated a noise receiver up to 40 GHz.
CitationMaya, M. C.; Lázaro, A.; Pradell, L. Extraction of an avalanche diode noise model for its application as on-wafer noise source. Microwave and optical technology letters, 2003, vol. 38, núm. 2, p. 89-92.
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