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A Method for the Determination of a Distributed FET Noise-Model Based on Matched-Source Noise-Figure Measurements

dc.contributor.authorMaya Sánchez, Mª del Carmen
dc.contributor.authorPradell i Cara, Lluís
dc.contributor.authorLázaro Guillén, Antoni
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2007-06-29T11:38:20Z
dc.date.available2007-06-29T11:38:20Z
dc.date.created2003
dc.date.issued2004-05-31
dc.identifier.citationMaya, M. C.; Pradell, A.; Lazaro, L. A method for the determination of a distributed FET noise-model based on matched-source noise-figure measurements. Microwave and optical technology letters, 2004, vol. 41, núm. 3, p. 221-225.
dc.identifier.issn0895-2477
dc.identifier.urihttp://hdl.handle.net/2117/1110
dc.description.abstractA new method for the determination of a distributed FET noise model is presented. It is based on the extraction of the intrinsic noise-correlation matrix of an elemental section of the device from the device's noise figure, measured for only one source-impedance state at a number of frequency points. Experimental results up to 40 GHz are given.
dc.format.extent221-225
dc.language.isoeng
dc.publisherJOHN WILEY & SONS INC
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
dc.subject.lcshRadio wave propagation
dc.subject.lcshNoise Measurement
dc.subject.lcshImpedance (Electricity) Measurement.
dc.subject.lcshField-effect transistors
dc.subject.othernoise-parameters measurement
dc.subject.otherFET noise parameters
dc.subject.otherdistributed FET noise model
dc.subject.otherintrinsic noise-correlation matrix
dc.subject.othernoise modeling
dc.subject.otherelectric impedance
dc.subject.otherfield effect transistors
dc.subject.othernoise measurement
dc.subject.othersemiconductor device noise
dc.subject.othermatched-source noise-figure measurement
dc.subject.othersource-impedance state
dc.titleA Method for the Determination of a Distributed FET Noise-Model Based on Matched-Source Noise-Figure Measurements
dc.typeArticle
dc.subject.lemacPropagació d'ones
dc.subject.lemacSoroll -- Mesurament
dc.subject.lemacTransistors d'efecte de camp
dc.subject.lemacImpedància (Electricitat)
dc.contributor.groupUniversitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
local.personalitzacitaciotrue


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