A new method for the determination of a distributed FET noise model is presented. It is based on the extraction of the intrinsic noise-correlation matrix of an elemental section of the device from the device's noise figure, measured for only one source-impedance state at a number of frequency points. Experimental results up to 40 GHz are given.
CitationMaya, M. C.; Pradell, A.; Lazaro, L. A method for the determination of a distributed FET noise-model based on matched-source noise-figure measurements. Microwave and optical technology letters, 2004, vol. 41, núm. 3, p. 221-225.
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