Process and temperature compensation for RF low-noise amplifiers and mixers
Tipus de documentArticle
Condicions d'accésAccés obert
Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated in order to maintain acceptable performance across all process corners and throughout the temperature range. This paper proposes a new technique consisting of a compensation circuit that adapts and generates the appropriate bias voltage for LNAs and mixers so that the variability with temperature and process corners of their main performance metrics (S-parameters, gain, noise figure, etc.) is minimized.
CitacióGómez, D.; Sroka, M.; González, J. Process and temperature compensation for RF low-noise amplifiers and mixers. "IEEE transactions on circuits and systems I: regular papers", 18 Desembre 2009, p. 1-8.