Temperature and process variations have become key
issues in the design of integrated circuits using deep submicron
technologies. In RF front-end circuitry, many characteristics must
be compensated in order to maintain acceptable performance
across all process corners and throughout the temperature range.
This paper proposes a new technique consisting of a compensation
circuit that adapts and generates the appropriate bias voltage for
LNAs and mixers so that the variability with temperature and
process corners of their main performance metrics (S-parameters,
gain, noise figure, etc.) is minimized.
CitationGómez, D.; Sroka, M.; González, J. Process and temperature compensation for RF low-noise amplifiers and mixers. "IEEE transactions on circuits and systems I: regular papers", 18 Desembre 2009, p. 1-8.
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