| Títol: | Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR |
| Autor: | Maya Sánchez, Mª del Carmen
Lázaro Guillén, Antoni
Pradell i Cara, Lluís |
| Altres autors/autores: | Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions |
| Editorial: | JOHN WILEY & SONS INC |
| Matèries: | Àrees temàtiques de la UPC::Enginyeria electrònica i telecomunicacions::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
Noise Measurement
Microwaves
on-wafer noise source
excess noise ratio
small signal equivalent circuit model
noise model
calibration
electric noise measurement
equivalent circuits
microwave field effect transistors
S-parameters
broadband-noise circuit model
reverse-biased cold-FET
noise-current sources
excess noise ratio
full receiver-noise calibration
noise powers
40 GHz
Soroll -- Mesurament
Microones |
| Tipus de document: | Article |
| Descripció: | This paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver-noise calibration. Experimental results up to 40 GHz are given. |
| Altres identificadors i accés: | Maya, M. C.; Lázaro, A.; Pradell, L. Noise model of a reverse-biased cold-FET applied to the characterization of its ENR. Microwave and optical technology letters, 2004, vol. 40, núm. 4, p. 326-330.
0895-2477
http://hdl.handle.net/2117/1105 |
| Disponible al dipòsit: | E-prints UPC
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