PublisherIEEE Press. Institute of Electrical and Electronics Engineers
Rights accessOpen Access
Thin films of GaAs(Ti) have been deposited by sputtering
on glass and n_GaAs substrates under different process
conditions. Optical characteristics of these samples have
been analyzed to study the potential of this material in
intermediate Band solar cell manufacturing.
CitationSilvestre, S.; Boronat, A.; Castañer, L. Study of GaAs(Ti) thin films as candidates for IB solar cells manufacturing. A: IEEE Photovoltaic Specialists Conference. "35th IEEE photovoltaic specialists conference ( PVSC)". Honolulu, Hawai: IEEE Press. Institute of Electrical and Electronics Engineers, 2010, p. 1210-1212.
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder. If you wish to make any use of the work not provided for in the law, please contact: firstname.lastname@example.org