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Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells
dc.contributor.author | Almora, Osbel |
dc.contributor.author | Gerling Sarabia, Luis Guillermo |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Garcia-Belmonte, Germà |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2017-05-03T16:12:19Z |
dc.date.available | 2019-05-03T00:30:35Z |
dc.date.issued | 2017-08-01 |
dc.identifier.citation | Almora, O, Gerling Sarabia, L., Voz, C., Alcubilla, R., Puigdollers, J. Garcia-Belmonte, G. Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells. "Solar energy materials and solar cells", 1 Agost 2017, vol. 168, p. 221-226. |
dc.identifier.issn | 0927-0248 |
dc.identifier.uri | http://hdl.handle.net/2117/104004 |
dc.description.abstract | Transition metal oxides (TMOs) have recently been proved to efficiently serve as hole-selective contacts in crystalline silicon (c-Si) heterojunction solar cells. In the present work, two TMO/c-Si heterojunctions are explored using MoO3 (reference) and V2O5 as an alternative candidate. It has been found that V2O5 devices present larger (16% improvement) power conversion efficiency mainly due to their higher open-circuit voltage. While V2O5/c-Si devices with textured front surfaces exhibit larger short-circuit currents, it is also observed that flat solar cell architectures allow for passivation of the V2O5/n-Si interface, giving significant carrier lifetimes of 200 µs (equivalent to a surface recombination velocity of Seff ~140 cm s-1) as derived from impedance analysis. As a consequence, a significant open-circuit voltage of 662 mV is achieved. It is found that, at the TMO/c-Si contact, a TMO work function enhancement ¿FTMO occurs during the heterojunction formation with the consequent dipole layer enlargement ¿’=¿+¿FTMO. Our results provide new insights into the TMO/c-Si contact energetics, carrier transport across the interface and surface recombination allowing for further understanding of the nature of TMO/c-Si heterojunctions. |
dc.format.extent | 6 p. |
dc.language.iso | eng |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Solar cells |
dc.subject.lcsh | Metallic oxides |
dc.subject.lcsh | Metal oxide semiconductors |
dc.subject.other | Transition metal oxides |
dc.subject.other | Silicon solar cells |
dc.subject.other | Impedance spectroscopy |
dc.subject.other | Passivation |
dc.subject.other | Minority carrier lifetime |
dc.title | Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.subject.lemac | Òxids metàl·lics |
dc.subject.lemac | Metalls de transició |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/j.solmat.2017.04.042 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0927024817302118 |
dc.rights.access | Open Access |
local.identifier.drac | 20330276 |
dc.description.version | Postprint (published version) |
local.citation.author | Almora, O.; Gerling Sarabia, L.; Voz, C.; Alcubilla, R.; Puigdollers, J.; Garcia-Belmonte, G. |
local.citation.publicationName | Solar energy materials and solar cells |
local.citation.volume | 168 |
local.citation.startingPage | 221 |
local.citation.endingPage | 226 |
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