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Analyzing stability concerns in the presence of variations in Subthreshold SRAM
| dc.contributor | Canal Corretger, Ramon |
| dc.contributor.author | Rana, Manish |
| dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors |
| dc.date.accessioned | 2014-02-11T10:35:02Z |
| dc.date.available | 2014-02-11T10:35:02Z |
| dc.date.issued | 2012-07-02 |
| dc.identifier.uri | http://hdl.handle.net/2099.1/20728 |
| dc.description.abstract | In this work, we analyse the stability of the SRAM bitcells when operating in subthreshold supply voltages.We propose a new bit cell with higher stability than 6T Bitcell,that is able to discharge the bit lines in 41% less time than the 6T as it's discharge path is only of single transistor. |
| dc.language.iso | eng |
| dc.publisher | Universitat Politècnica de Catalunya |
| dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats |
| dc.subject.lcsh | Integrated circuits |
| dc.subject.other | Subliminals |
| dc.subject.other | inversió feble |
| dc.subject.other | SRAM Bit de cèl · lules |
| dc.subject.other | marge de soroll estàtic |
| dc.subject.other | N-corba |
| dc.subject.other | variacions del procés |
| dc.subject.other | Subthreshold |
| dc.subject.other | Weak Inversion |
| dc.subject.other | SRAM Bit-cell |
| dc.subject.other | Static Noise Margin |
| dc.subject.other | N-curve |
| dc.subject.other | Process Variations |
| dc.title | Analyzing stability concerns in the presence of variations in Subthreshold SRAM |
| dc.type | Master thesis |
| dc.subject.lemac | Circuits integrats |
| dc.identifier.slug | 84693 |
| dc.rights.access | Open Access |
| dc.date.updated | 2014-02-11T08:35:30Z |
| dc.audience.educationlevel | Màster |
| dc.audience.mediator | Facultat d'Informàtica de Barcelona |
| dc.audience.degree | MÀSTER UNIVERSITARI EN INTEL·LIGÈNCIA ARTIFICIAL (Pla 2012) |
