Articles de revista
http://hdl.handle.net/2117/2413
Fri, 15 Dec 2017 23:52:03 GMT2017-12-15T23:52:03ZRadiation damage evaluation on AlGaAs/GaAs solar cells
http://hdl.handle.net/2117/111982
Radiation damage evaluation on AlGaAs/GaAs solar cells
García, E; Alcubilla González, Ramón; Prat Viñas, Lluís; Castañer Muñoz, Luis María
A computer model to evaluate radiation damage on AlGaAs-based solar cells is reported. The model is based on a piecewise approach that divides the cell structure in an adaptive number of slices. Inside a particular slice the semiconductor parameters are constant; consequently, it is easy to find an analytical solution of the semiconductor transport equations with suitable boundary conditions for the interfaces with the adjacent slices. The model provides all electrical parameters of the cells in the operating temperature range. Different structures, including graded band gaps and double heterofaces can be analyzed. Proton damage coefficients as well as proton damage ratios can be calculated for energies between 30 and 10/sup 4/ keV with only two adjustable parameters. Coirradiation experiments with different energy protons were simulated by improving the conventional method of degradation computering.
Wed, 13 Dec 2017 19:09:28 GMThttp://hdl.handle.net/2117/1119822017-12-13T19:09:28ZGarcía, EAlcubilla González, RamónPrat Viñas, LluísCastañer Muñoz, Luis MaríaA computer model to evaluate radiation damage on AlGaAs-based solar cells is reported. The model is based on a piecewise approach that divides the cell structure in an adaptive number of slices. Inside a particular slice the semiconductor parameters are constant; consequently, it is easy to find an analytical solution of the semiconductor transport equations with suitable boundary conditions for the interfaces with the adjacent slices. The model provides all electrical parameters of the cells in the operating temperature range. Different structures, including graded band gaps and double heterofaces can be analyzed. Proton damage coefficients as well as proton damage ratios can be calculated for energies between 30 and 10/sup 4/ keV with only two adjustable parameters. Coirradiation experiments with different energy protons were simulated by improving the conventional method of degradation computering.VOFTools - A software package of calculation tools for volume of fluid methods using general convex grids
http://hdl.handle.net/2117/111968
VOFTools - A software package of calculation tools for volume of fluid methods using general convex grids
López González, Juan Miguel; Hernandez, J; Gomez, P.; Faura, F.
The VOFTools library includes efficient analytical and geometrical routines for (1) area/volume computation, (2) truncation operations that typically arise in VOF (volume of fluid) methods, (3) area/volume conservation enforcement (VCE) in PLIC (piecewise linear interface calculation) reconstruction and(4) computation of the distance from a given point to the reconstructed interface. The computation of a polyhedron volume uses an efficient formula based on a quadrilateral decomposition and a 2D projection of each polyhedron face. The analytical VCE method is based on coupling an interpolation procedure to bracket the solution with an improved final calculation step based on the above volume computation formula. Although the library was originally created to help develop highly accurate advection and reconstruction schemes in the context of VOF methods, it may have more general applications. To assess the performance of the supplied routines, different tests, which are provided in FORTRAN and C, were implemented for several 2D and 3D geometries. Program summary: Program Title: VOFTools Program Files doi: http://dx.doi.org/10.17632/brrgt645bh.1 Licensing provisions: GNU General Public License, version 3. Programming language: FORTRAN and C, with C interfaces. Nature of problem: The package of routines includes simple and efficient analytical and geometrical tools for area/volume computation, truncation operations that typically arise in VOF (volume of fluid) methods, area/volume conservation enforcement (VCE) in PLIC (piecewise linear interface calculation) reconstruction and computation of the distance from a given point to the reconstructed interface. Solution method: The volume (area in 2D) computation of a polyhedron (polygon in 2D) uses an efficient formula based on a quadrilateral decomposition and a 2D projection of each polyhedron face. The analytical VCE method is based on coupling an interpolation bracketing procedure with an improved final calculation step based on the above volume computation formula. Also, the exact distance from a given point to a reconstructed polygonal interface is calculated. Restrictions: Convex 2D and 3D polytopes.
Wed, 13 Dec 2017 18:09:37 GMThttp://hdl.handle.net/2117/1119682017-12-13T18:09:37ZLópez González, Juan MiguelHernandez, JGomez, P.Faura, F.The VOFTools library includes efficient analytical and geometrical routines for (1) area/volume computation, (2) truncation operations that typically arise in VOF (volume of fluid) methods, (3) area/volume conservation enforcement (VCE) in PLIC (piecewise linear interface calculation) reconstruction and(4) computation of the distance from a given point to the reconstructed interface. The computation of a polyhedron volume uses an efficient formula based on a quadrilateral decomposition and a 2D projection of each polyhedron face. The analytical VCE method is based on coupling an interpolation procedure to bracket the solution with an improved final calculation step based on the above volume computation formula. Although the library was originally created to help develop highly accurate advection and reconstruction schemes in the context of VOF methods, it may have more general applications. To assess the performance of the supplied routines, different tests, which are provided in FORTRAN and C, were implemented for several 2D and 3D geometries. Program summary: Program Title: VOFTools Program Files doi: http://dx.doi.org/10.17632/brrgt645bh.1 Licensing provisions: GNU General Public License, version 3. Programming language: FORTRAN and C, with C interfaces. Nature of problem: The package of routines includes simple and efficient analytical and geometrical tools for area/volume computation, truncation operations that typically arise in VOF (volume of fluid) methods, area/volume conservation enforcement (VCE) in PLIC (piecewise linear interface calculation) reconstruction and computation of the distance from a given point to the reconstructed interface. Solution method: The volume (area in 2D) computation of a polyhedron (polygon in 2D) uses an efficient formula based on a quadrilateral decomposition and a 2D projection of each polyhedron face. The analytical VCE method is based on coupling an interpolation bracketing procedure with an improved final calculation step based on the above volume computation formula. Also, the exact distance from a given point to a reconstructed polygonal interface is calculated. Restrictions: Convex 2D and 3D polytopes.Solid-state organization of n-type carbazole-based semiconductors for organic thin-film transistors
http://hdl.handle.net/2117/111946
Solid-state organization of n-type carbazole-based semiconductors for organic thin-film transistors
Reig, Marta; Puigdollers i González, Joaquim; Velasco, Dolores
The development of new organic semiconductors has been mainly led by the search of new p-conjugated cores, but recently the use of flexible side chains is attracting more and more attention to control the molecular packing and order in the solid state to improve the charge-transporting properties. In this work, the charge transport properties of a series of tricyanovinyl-substituted carbazole-based materials with different alkyl chain length have been investigated and correlated with the respective intermolecular interactions and molecular packing via X-ray diffraction (XRD) studies.
Wed, 13 Dec 2017 15:37:54 GMThttp://hdl.handle.net/2117/1119462017-12-13T15:37:54ZReig, MartaPuigdollers i González, JoaquimVelasco, DoloresThe development of new organic semiconductors has been mainly led by the search of new p-conjugated cores, but recently the use of flexible side chains is attracting more and more attention to control the molecular packing and order in the solid state to improve the charge-transporting properties. In this work, the charge transport properties of a series of tricyanovinyl-substituted carbazole-based materials with different alkyl chain length have been investigated and correlated with the respective intermolecular interactions and molecular packing via X-ray diffraction (XRD) studies.A prototype reactor for highly selective solar-driven CO2 reduction to synthesis gas using nanosized earth-abundant catalysts and silicon photovoltaics
http://hdl.handle.net/2117/111141
A prototype reactor for highly selective solar-driven CO2 reduction to synthesis gas using nanosized earth-abundant catalysts and silicon photovoltaics
Urbain, Félix; Tang, Pengyi; Carretero González, Nina Maga; Andreu, Teresa; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Arbiol Cobos, Jordi; Morante Lleonart, Joan Ramon
The conversion of carbon dioxide (CO2) into value-added chemicals and fuels, preferably using renewable energy and earth-abundant materials, is considered a key priority for future energy research. In this work, a bias-free reactor device for the solar-driven conversion of CO2 to synthesis gas (syngas) has been developed. The integrated fluidic device consists of a cathode made of copper foam coated with low-cost nanosized zinc flakes as catalyst to perform the CO2 reduction reaction (CO2RR) to syngas, an adapted silicon heterojunction solar cell structure as photoanode with nickel foam as catalyst to facilitate the oxygen evolution reaction (OER), and a bipolar membrane separating the respective catholyte and anolyte compartments. The membrane allows for the operation of the catholyte and anolyte at different pH values. Stable and tunable hydrogen-to-carbon monoxide (H2:CO) ratios between 5 and 0.5 along with high CO Faradaic efficiencies of up to 85% and CO current densities of 39.4 mA cm-2 have been demonstrated. Under photoelectrolysis conditions, the photovoltage of the photoanode was varied between 0.6 V and 2.4 V by connecting up to four heterojunction solar cells in series, and thus reducing the overall cell voltage solely by solar energy utilization. Bias-free operation of the integrated device has been achieved under ambient conditions with active areas for CO2RR and OER, respectively, of 10 cm2. An operation current density of 5.0 mA cm-2 was measured under 100 mW cm-2 illumination of the complete device, which corresponds to a solar-to-syngas conversion efficiency of 4.3%.
Fri, 24 Nov 2017 07:36:30 GMThttp://hdl.handle.net/2117/1111412017-11-24T07:36:30ZUrbain, FélixTang, PengyiCarretero González, Nina MagaAndreu, TeresaGerling Sarabia, Luis GuillermoVoz Sánchez, CristóbalArbiol Cobos, JordiMorante Lleonart, Joan RamonThe conversion of carbon dioxide (CO2) into value-added chemicals and fuels, preferably using renewable energy and earth-abundant materials, is considered a key priority for future energy research. In this work, a bias-free reactor device for the solar-driven conversion of CO2 to synthesis gas (syngas) has been developed. The integrated fluidic device consists of a cathode made of copper foam coated with low-cost nanosized zinc flakes as catalyst to perform the CO2 reduction reaction (CO2RR) to syngas, an adapted silicon heterojunction solar cell structure as photoanode with nickel foam as catalyst to facilitate the oxygen evolution reaction (OER), and a bipolar membrane separating the respective catholyte and anolyte compartments. The membrane allows for the operation of the catholyte and anolyte at different pH values. Stable and tunable hydrogen-to-carbon monoxide (H2:CO) ratios between 5 and 0.5 along with high CO Faradaic efficiencies of up to 85% and CO current densities of 39.4 mA cm-2 have been demonstrated. Under photoelectrolysis conditions, the photovoltage of the photoanode was varied between 0.6 V and 2.4 V by connecting up to four heterojunction solar cells in series, and thus reducing the overall cell voltage solely by solar energy utilization. Bias-free operation of the integrated device has been achieved under ambient conditions with active areas for CO2RR and OER, respectively, of 10 cm2. An operation current density of 5.0 mA cm-2 was measured under 100 mW cm-2 illumination of the complete device, which corresponds to a solar-to-syngas conversion efficiency of 4.3%.Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/ n -Si Schottky diode
http://hdl.handle.net/2117/108808
Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/ n -Si Schottky diode
Mahato, Somnath; Biswas, Debaleen; Gerling Sarabia, Luis Guillermo; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim
Electronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements ranging from 300 K to 150 K. Ideality factor (n) and barrier height (ø) for the Schottky device were obtained from I-V characteristics as 2.04 and 0.83 eV at 300 K and 6.95 and 0.39 eV at 150 K respectively. It was observed that in presence of inhomogeneity at metal-semiconductor interface, the ideality factor increases and barrier height decreases with the decrease of temperature. The Richardson constant value was estimated as 137 A-cm-2-K-2 from modified Richardson plot, which is closer to the known theoretical value of n-Si where mean value of barrier height (øb0), and its standard deviation (s0) were estimated using double Gaussian distribution (DGD) analysis. Different device parameters, namely, built-in potential, carrier concentration, image force lowering and depletion width were also obtained from the C-V-T measurements. First time use of V2O5 thin-film as an interfacial layer (IL) on Au/V2O5/n-Si Schottky diode was successfully explained by the thermionic emission (TE) theory. The interesting result obtained in this present work is the V2O5 thin-film reduced its conducting capability with decreasing temperature, while it shows a totally insulating behaviour below 150 K.
Wed, 18 Oct 2017 13:20:00 GMThttp://hdl.handle.net/2117/1088082017-10-18T13:20:00ZMahato, SomnathBiswas, DebaleenGerling Sarabia, Luis GuillermoVoz Sánchez, CristóbalPuigdollers i González, JoaquimElectronic properties of Au/V2O5/n-Si Schottky device have been investigated by temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements ranging from 300 K to 150 K. Ideality factor (n) and barrier height (ø) for the Schottky device were obtained from I-V characteristics as 2.04 and 0.83 eV at 300 K and 6.95 and 0.39 eV at 150 K respectively. It was observed that in presence of inhomogeneity at metal-semiconductor interface, the ideality factor increases and barrier height decreases with the decrease of temperature. The Richardson constant value was estimated as 137 A-cm-2-K-2 from modified Richardson plot, which is closer to the known theoretical value of n-Si where mean value of barrier height (øb0), and its standard deviation (s0) were estimated using double Gaussian distribution (DGD) analysis. Different device parameters, namely, built-in potential, carrier concentration, image force lowering and depletion width were also obtained from the C-V-T measurements. First time use of V2O5 thin-film as an interfacial layer (IL) on Au/V2O5/n-Si Schottky diode was successfully explained by the thermionic emission (TE) theory. The interesting result obtained in this present work is the V2O5 thin-film reduced its conducting capability with decreasing temperature, while it shows a totally insulating behaviour below 150 K.Closed-loop compensation of charge trapping induced by ionizing radiation in MOS capacitors
http://hdl.handle.net/2117/108041
Closed-loop compensation of charge trapping induced by ionizing radiation in MOS capacitors
Domínguez Pumar, Manuel; Bheesayagari, Chenna Reddy; Gorreta Mariné, Sergio; Lopez Chavez, G.; Pons Nin, Joan
The objective of this work is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of MOS capacitors. To this effect, two devices made with silicon oxide have been simultaneously irradiated with gamma radiation: one with constant voltage bias, and the other working under a dielectric charge control. The experiment shows substantial charge trapping in the uncontrolled device whereas, at the same time, the control loop is able to compensate the charge induced by gamma radiation in the second device.
Tue, 26 Sep 2017 17:20:45 GMThttp://hdl.handle.net/2117/1080412017-09-26T17:20:45ZDomínguez Pumar, ManuelBheesayagari, Chenna ReddyGorreta Mariné, SergioLopez Chavez, G.Pons Nin, JoanThe objective of this work is to explore the capability of a charge trapping control loop to continuously compensate charge induced by ionizing radiation in the dielectric of MOS capacitors. To this effect, two devices made with silicon oxide have been simultaneously irradiated with gamma radiation: one with constant voltage bias, and the other working under a dielectric charge control. The experiment shows substantial charge trapping in the uncontrolled device whereas, at the same time, the control loop is able to compensate the charge induced by gamma radiation in the second device.An enhanced machine learning based approach for failures detection and diagnosis of PV systems
http://hdl.handle.net/2117/107670
An enhanced machine learning based approach for failures detection and diagnosis of PV systems
Garoudja, Elyes; Chouder, Aissa; Kara, Kamel; Silvestre Bergés, Santiago
In this paper, a novel procedure for fault detection and diagnosis in the direct current (DC) side of PV system, based on probabilistic neural network (PNN) classifier, is proposed. The suggested procedure consists of four main stages: (i) PV module parameters extraction, (ii) PV array simulation and experimental validation (iii) elaboration of a relevant database of both healthy and faulty operations, and (iv) network construction, training and testing. In the first stage, the unknown electrical parameters of the one diode model (ODM) are accurately identified using the best-so-far ABC algorithm. Then, based on these parameters the PV array is simulated and experimentally validated by using a PSIM™/Matlab™ co-simulation. Finally, efficient fault detection and diagnosis procedure based on PNN classifier is implemented. Four operating cases were tested in a grid connected PV system of 9.54 kWp: Healthy system, three modules short-circuited in one string, ten modules short-circuited in one string, and a string disconnected from the array. Moreover, the PNN method was compared, under real operating conditions, with the feed forward back-propagation Artificial Neural Network (ANN) classifiers method, for noiseless and noisy data to evaluate the suggested method’s accuracy and test its aptitude to support noisy data. The obtained results have demonstrated the high efficiency of the proposed method to detect and diagnose DC side anomalies for both noiseless and noisy data cases.
Fri, 15 Sep 2017 13:49:35 GMThttp://hdl.handle.net/2117/1076702017-09-15T13:49:35ZGaroudja, ElyesChouder, AissaKara, KamelSilvestre Bergés, SantiagoIn this paper, a novel procedure for fault detection and diagnosis in the direct current (DC) side of PV system, based on probabilistic neural network (PNN) classifier, is proposed. The suggested procedure consists of four main stages: (i) PV module parameters extraction, (ii) PV array simulation and experimental validation (iii) elaboration of a relevant database of both healthy and faulty operations, and (iv) network construction, training and testing. In the first stage, the unknown electrical parameters of the one diode model (ODM) are accurately identified using the best-so-far ABC algorithm. Then, based on these parameters the PV array is simulated and experimentally validated by using a PSIM™/Matlab™ co-simulation. Finally, efficient fault detection and diagnosis procedure based on PNN classifier is implemented. Four operating cases were tested in a grid connected PV system of 9.54 kWp: Healthy system, three modules short-circuited in one string, ten modules short-circuited in one string, and a string disconnected from the array. Moreover, the PNN method was compared, under real operating conditions, with the feed forward back-propagation Artificial Neural Network (ANN) classifiers method, for noiseless and noisy data to evaluate the suggested method’s accuracy and test its aptitude to support noisy data. The obtained results have demonstrated the high efficiency of the proposed method to detect and diagnose DC side anomalies for both noiseless and noisy data cases.Controlling Plateau-Rayleigh instabilities during the reorganization of silicon macropores in the Silicon Millefeuille process
http://hdl.handle.net/2117/107514
Controlling Plateau-Rayleigh instabilities during the reorganization of silicon macropores in the Silicon Millefeuille process
Garin Escriva, Moises; Jin, Chen; Cardador Maza, David; Trifonov, T.; Alcubilla González, Ramón
The reorganization through high-temperature annealing of closely-packed pore arrays can be exploited to create ultra-thin (<20 µm) monocrystalline silicon layers that can work as cheap and flexible substrates for both the electronic and the photovoltaic industries. By introducing a periodic diameter modulation along deep etched pores, many thin layers can be produced from a single substrate and in a single technological process. Besides the periodicity, the exact shape of the modulation also has a profound impact on the process and subtle profile changes can lead to important differences on the process outcome. In this paper we study both theoretically and experimentally the effect of the initial profile on the pore reorganization dynamics and the morphology of the thin layers obtained through annealing. We show that process reliability, annealing time and final layer characteristics, all can be engineered and optimized by precisely controlling the initial pore profile.
Fri, 08 Sep 2017 07:12:29 GMThttp://hdl.handle.net/2117/1075142017-09-08T07:12:29ZGarin Escriva, MoisesJin, ChenCardador Maza, DavidTrifonov, T.Alcubilla González, RamónThe reorganization through high-temperature annealing of closely-packed pore arrays can be exploited to create ultra-thin (<20 µm) monocrystalline silicon layers that can work as cheap and flexible substrates for both the electronic and the photovoltaic industries. By introducing a periodic diameter modulation along deep etched pores, many thin layers can be produced from a single substrate and in a single technological process. Besides the periodicity, the exact shape of the modulation also has a profound impact on the process and subtle profile changes can lead to important differences on the process outcome. In this paper we study both theoretically and experimentally the effect of the initial profile on the pore reorganization dynamics and the morphology of the thin layers obtained through annealing. We show that process reliability, annealing time and final layer characteristics, all can be engineered and optimized by precisely controlling the initial pore profile.Analysis of thin film photovoltaic modules under outdoor long term exposure in semi-arid climate conditions.
http://hdl.handle.net/2117/107466
Analysis of thin film photovoltaic modules under outdoor long term exposure in semi-arid climate conditions.
Tahri, Ali; Silvestre Bergés, Santiago; Tahri, Fatima; Belemna, Soumia; Chouder, Aissa
The aim of this paper is to present an analysis of long term outdoor exposure of two thin film photovoltaic (TFPV) module technologies deployed in semi-arid climate in Saida city located in Algeria. The TFPV modules are: a-Si:H/µc-Si:H (micromorph) and copper indium selenide (CIS). The TFPV modules were characterised by measuring their I-V curves during three years under the same outdoor climate conditions, where the measurement of weather parameters were also performed. The goal of the analysis is to evaluate the degradation rates of the TFPV modules in semi-arid climate. The analysis is based on two techniques, the effective peak power of PV module and power irradiance technique. It was found that TFPV modules CIS and micromorph exhibit a degradation rate of -2.34%/year and -1.73%/year respectively. The calculated degradation rate for CIS technology is higher than those reported in the literature for locations in Europe and lower than those for locations with hot and humid conditions. In the opposite the degradation rate of the micromorph was lower than those given in the literature.
Wed, 06 Sep 2017 16:24:39 GMThttp://hdl.handle.net/2117/1074662017-09-06T16:24:39ZTahri, AliSilvestre Bergés, SantiagoTahri, FatimaBelemna, SoumiaChouder, AissaThe aim of this paper is to present an analysis of long term outdoor exposure of two thin film photovoltaic (TFPV) module technologies deployed in semi-arid climate in Saida city located in Algeria. The TFPV modules are: a-Si:H/µc-Si:H (micromorph) and copper indium selenide (CIS). The TFPV modules were characterised by measuring their I-V curves during three years under the same outdoor climate conditions, where the measurement of weather parameters were also performed. The goal of the analysis is to evaluate the degradation rates of the TFPV modules in semi-arid climate. The analysis is based on two techniques, the effective peak power of PV module and power irradiance technique. It was found that TFPV modules CIS and micromorph exhibit a degradation rate of -2.34%/year and -1.73%/year respectively. The calculated degradation rate for CIS technology is higher than those reported in the literature for locations in Europe and lower than those for locations with hot and humid conditions. In the opposite the degradation rate of the micromorph was lower than those given in the literature.V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
http://hdl.handle.net/2117/104974
V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
Masmitjà Rusiñol, Gerard; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael; Puigdollers i González, Joaquim; Martín García, Isidro; Voz Sánchez, Cristóbal; Alcubilla González, Ramón
Over the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use of both a thin and high quality intrinsic amorphous Si layer and TCO (Transparent Conductive Oxide) films. In this work, we explore the use of vanadium suboxide (V2Ox) capped with a thin Ni layer as a hole transport layer trying to avoid both the intrinsic amorphous silicon layer and the TCO contact layer. Obtained figures of merit for Ni/V2Ox/c-Si(n) test samples are saturation current densities of 175 fA cm-2 and specific contact resistance below 115 mO cm2 on 40 nm thick V2Ox layers. Finally, the Ni/V2Ox stack is used with an interdigitated back-contacted c-Si(n) solar cell architecture fully fabricated at low temperatures. An open circuit voltage, a short circuit current and a fill factor of 656 mV, 40.7 mA cm-2 and 74.0% are achieved, respectively, leading to a power conversion efficiency of 19.7%. These results confirm the high potential of Ni/V2Ox stacks as hole-selective contacts on crystalline silicon photovoltaics.
Mon, 29 May 2017 09:25:11 GMThttp://hdl.handle.net/2117/1049742017-05-29T09:25:11ZMasmitjà Rusiñol, GerardGerling Sarabia, Luis GuillermoOrtega Villasclaras, Pablo RafaelPuigdollers i González, JoaquimMartín García, IsidroVoz Sánchez, CristóbalAlcubilla González, RamónOver the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use of both a thin and high quality intrinsic amorphous Si layer and TCO (Transparent Conductive Oxide) films. In this work, we explore the use of vanadium suboxide (V2Ox) capped with a thin Ni layer as a hole transport layer trying to avoid both the intrinsic amorphous silicon layer and the TCO contact layer. Obtained figures of merit for Ni/V2Ox/c-Si(n) test samples are saturation current densities of 175 fA cm-2 and specific contact resistance below 115 mO cm2 on 40 nm thick V2Ox layers. Finally, the Ni/V2Ox stack is used with an interdigitated back-contacted c-Si(n) solar cell architecture fully fabricated at low temperatures. An open circuit voltage, a short circuit current and a fill factor of 656 mV, 40.7 mA cm-2 and 74.0% are achieved, respectively, leading to a power conversion efficiency of 19.7%. These results confirm the high potential of Ni/V2Ox stacks as hole-selective contacts on crystalline silicon photovoltaics.