http://hdl.handle.net/2117/3647 Sat, 25 May 2013 22:14:22 GMT 2013-05-25T22:14:22Z webmaster.bupc@upc.edu Universitat Politècnica de Catalunya. Servei de Biblioteques i Documentació no http://hdl.handle.net/2117/19295 Title: Nondestructive diagnosis of mechanical misalignments in dual axis accelerometers Authors: Gómez Pau, Álvaro; Balado Suárez, Luz María; Figueras Pàmies, Joan Abstract: Microelectromechanical systems production is still an immature technology compared to the classical semiconductor industry. MEMS fabrication and packaging processes may present misalignments which result in an improper placement of the internal microstructures or dies. In this work, the possibilities of diagnosing mechanical misalignments of dual axis IC accelerometers are explored. The used method dynamically correlates the two output signals in orthogonal directions. This leads to a Lissajous composition which is able to manifest the actual level of misalignment. The definition of a metric and its variation rate study allows the diagnosis procedure. Experimental results using a commercial dual axis capacitive accelerometer reveal diagnosis discrepancies as low as 1.1%, therefore showing the viability of the proposal. Thu, 16 May 2013 12:38:28 GMT http://hdl.handle.net/2117/19295 2013-05-16T12:38:28Z Gómez Pau, Álvaro; Balado Suárez, Luz María; Figueras Pàmies, Joan no Microelectromechanical systems production is still an immature technology compared to the classical semiconductor industry. MEMS fabrication and packaging processes may present misalignments which result in an improper placement of the internal microstructures or dies. In this work, the possibilities of diagnosing mechanical misalignments of dual axis IC accelerometers are explored. The used method dynamically correlates the two output signals in orthogonal directions. This leads to a Lissajous composition which is able to manifest the actual level of misalignment. The definition of a metric and its variation rate study allows the diagnosis procedure. Experimental results using a commercial dual axis capacitive accelerometer reveal diagnosis discrepancies as low as 1.1%, therefore showing the viability of the proposal. http://hdl.handle.net/2117/17947 Title: Built-In test of MEMS capacitive accelerometers for field failures and aging degradation. Authors: Gómez Pau, Álvaro; Sanahuja Moliner, Ricard; Balado Suárez, Luz María; Figueras Pàmies, Joan Fri, 22 Feb 2013 14:42:57 GMT http://hdl.handle.net/2117/17947 2013-02-22T14:42:57Z Gómez Pau, Álvaro; Sanahuja Moliner, Ricard; Balado Suárez, Luz María; Figueras Pàmies, Joan no http://hdl.handle.net/2117/17943 Title: SRAM stability metric under transient noise Authors: Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan Abstract: ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static noise. The static immunity to disturbances like process and mi smatch variations, bulk noises, supply rings variations, temperature changes is well characterized by means of the Static Noise Margin (SNM) defined as the maximum applicable series voltage at the inputs which causes no change in the data retention nodes. However, a significant number of disturbance sources present a transient behavior which is ignored by the static analysis but has to be taken in consideration for a complete characterization of the cell’s behavior. In this paper, a metric to evaluate the cell robustness in the presence of transient voltage noise is proposed based on determining the energy of the noise signal which is able to flip the cell’s state. The Dynamic Noise Margin(DNM) metric is defined as the minimum energy of the voltage noise signal able to flip the cell. Fri, 22 Feb 2013 13:45:26 GMT http://hdl.handle.net/2117/17943 2013-02-22T13:45:26Z Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan no ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static noise. The static immunity to disturbances like process and mi smatch variations, bulk noises, supply rings variations, temperature changes is well characterized by means of the Static Noise Margin (SNM) defined as the maximum applicable series voltage at the inputs which causes no change in the data retention nodes. However, a significant number of disturbance sources present a transient behavior which is ignored by the static analysis but has to be taken in consideration for a complete characterization of the cell’s behavior. In this paper, a metric to evaluate the cell robustness in the presence of transient voltage noise is proposed based on determining the energy of the noise signal which is able to flip the cell’s state. The Dynamic Noise Margin(DNM) metric is defined as the minimum energy of the voltage noise signal able to flip the cell. http://hdl.handle.net/2117/15781 Title: Transient noise failures in SRAM cells: dynamic noise margin metric Authors: Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan Abstract: Current nanometric IC processes need to assess the robustness of memories under any possible source of disturbance: process and mismatch variations, bulk noises, supply rings variations, temperature changes, aging and environmental aggressions such as RF or on-chip couplings. In the case of SRAM cells, the static immunity to such perturbations is well characterized by means of the Static Noise Margin (SNM)defined as the maximum applicable series voltage at the inputs which causes no change in the data retention nodes. In addition, a significant number of disturbance sources present a transient behavior which has to be taken in consideration. In this paper, a metric to evaluate the cell robustness in the presence of transient voltage signals is proposed. Sufficiently high energy noise signals will compel the cell to flip to a failure state. On the other hand, sufficiently low energy noise signals will not be able to flip the cell and the state will be preserved. The Dynamic Noise Margin(DNM) metric is defined as the minimum energy of the voltage pulses able to flip the cell. A case example of transient voltage noise pulses on a 6T SRAM cell using 45nm technology has been studied. Simulation results show the use of the proposed metric as an indicator of cell robustness in the presence of transient voltage noise Mon, 07 May 2012 09:57:32 GMT http://hdl.handle.net/2117/15781 2012-05-07T09:57:32Z Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan no Current nanometric IC processes need to assess the robustness of memories under any possible source of disturbance: process and mismatch variations, bulk noises, supply rings variations, temperature changes, aging and environmental aggressions such as RF or on-chip couplings. In the case of SRAM cells, the static immunity to such perturbations is well characterized by means of the Static Noise Margin (SNM)defined as the maximum applicable series voltage at the inputs which causes no change in the data retention nodes. In addition, a significant number of disturbance sources present a transient behavior which has to be taken in consideration. In this paper, a metric to evaluate the cell robustness in the presence of transient voltage signals is proposed. Sufficiently high energy noise signals will compel the cell to flip to a failure state. On the other hand, sufficiently low energy noise signals will not be able to flip the cell and the state will be preserved. The Dynamic Noise Margin(DNM) metric is defined as the minimum energy of the voltage pulses able to flip the cell. A case example of transient voltage noise pulses on a 6T SRAM cell using 45nm technology has been studied. Simulation results show the use of the proposed metric as an indicator of cell robustness in the presence of transient voltage noise http://hdl.handle.net/2117/14651 Title: Maximum IR-drop in On-Chip Power Distribution Networks of Wire-Bonded Integrated Circuits Authors: Rius Vázquez, José; Aguareles Carrero, María Abstract: A compact IR-drop model for on-chip power distribution networks in wire-bonded ICs is presented. Chip dimensions, metal coverage and piecewise distribution of the IC consumption are taken into account to obtain closed form expressions for the maximum IR-drop as well as its place. Comparison with simulations shows an error as small as 2% in most the cases. Wed, 18 Jan 2012 12:46:01 GMT http://hdl.handle.net/2117/14651 2012-01-18T12:46:01Z Rius Vázquez, José; Aguareles Carrero, María no A compact IR-drop model for on-chip power distribution networks in wire-bonded ICs is presented. Chip dimensions, metal coverage and piecewise distribution of the IC consumption are taken into account to obtain closed form expressions for the maximum IR-drop as well as its place. Comparison with simulations shows an error as small as 2% in most the cases. http://hdl.handle.net/2117/14597 Title: 8T SRAM Cell with Open Defects under Voltage and Timing Variations Authors: Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Castillo Muñoz, Raul Tue, 17 Jan 2012 12:01:26 GMT http://hdl.handle.net/2117/14597 2012-01-17T12:01:26Z Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Castillo Muñoz, Raul no http://hdl.handle.net/2117/14355 Title: Identification of component deviations in analog circuits using digital signatures Authors: Gómez Pau, Álvaro; Sanahuja Moliner, Ricard; Balado Suárez, Luz María; Figueras Pàmies, Joan Abstract: Analog circuits component diagnosis is a challenging task requiring expensive resources. This paper presents a low cost method to identify deviations in multiple component values using a precharacterisation of the impact of the deviations on the digital signatures for a set of input excitations. The method predicts several circuit under diagnosis (CUD) deviations by mapping them to a scalar value that indicates the discrepancy of the defective and golden digital signatures. Input excitation consists of a small set of sinusoidal signals with different frequencies. A digital signature is generated for every excitation set and compared to the golden response. The scalar discrepancy values are used to obtain the component deviations of the CUD. In order to generate the signatures, a CMOS monitor circuit has been designed and fabricated. The method is applied to the identification of capacitance deviations in a Biquad filter. Simulated results show the possibilities of the proposal Thu, 29 Dec 2011 12:18:05 GMT http://hdl.handle.net/2117/14355 2011-12-29T12:18:05Z Gómez Pau, Álvaro; Sanahuja Moliner, Ricard; Balado Suárez, Luz María; Figueras Pàmies, Joan no Analog circuits component diagnosis is a challenging task requiring expensive resources. This paper presents a low cost method to identify deviations in multiple component values using a precharacterisation of the impact of the deviations on the digital signatures for a set of input excitations. The method predicts several circuit under diagnosis (CUD) deviations by mapping them to a scalar value that indicates the discrepancy of the defective and golden digital signatures. Input excitation consists of a small set of sinusoidal signals with different frequencies. A digital signature is generated for every excitation set and compared to the golden response. The scalar discrepancy values are used to obtain the component deviations of the CUD. In order to generate the signatures, a CMOS monitor circuit has been designed and fabricated. The method is applied to the identification of capacitance deviations in a Biquad filter. Simulated results show the possibilities of the proposal http://hdl.handle.net/2117/13394 Title: Testing IC accelerometers using Lissajous compositions Authors: Gómez Pau, Álvaro; Balado Suárez, Luz María; Figueras Pàmies, Joan Abstract: Micro Electro Mechanical devices (MEMs) have widened their range of applications in a spectacular way in the last years. Reliability of MEMs devices is one of the areas that need to be improved to achieve high volume production at allowable costs. Accelerometers have in their design some mechanical and layout symmetries that can be used to improve the test and diagnosis results. In our approach we take profit of the symmetries of dual axis accelerometers to analyze and test its behavior using a procedure that composes the two orthogonal outputs when the accelerometer is spun. The complexity in the kinematics seen by the sensitive axes of the accelerometer yields rich and complex Lissajous traces that characterize the device and allows to determine the possible mismatchings in the assumed damped mass model parameters. In order to compare and quantify parameter discrepancies, a metric has been defined to allow to determine whether the DUT is within specifications or not. Thu, 29 Sep 2011 16:46:04 GMT http://hdl.handle.net/2117/13394 2011-09-29T16:46:04Z Gómez Pau, Álvaro; Balado Suárez, Luz María; Figueras Pàmies, Joan no Micro Electro Mechanical devices (MEMs) have widened their range of applications in a spectacular way in the last years. Reliability of MEMs devices is one of the areas that need to be improved to achieve high volume production at allowable costs. Accelerometers have in their design some mechanical and layout symmetries that can be used to improve the test and diagnosis results. In our approach we take profit of the symmetries of dual axis accelerometers to analyze and test its behavior using a procedure that composes the two orthogonal outputs when the accelerometer is spun. The complexity in the kinematics seen by the sensitive axes of the accelerometer yields rich and complex Lissajous traces that characterize the device and allows to determine the possible mismatchings in the assumed damped mass model parameters. In order to compare and quantify parameter discrepancies, a metric has been defined to allow to determine whether the DUT is within specifications or not. http://hdl.handle.net/2117/13378 Title: CLIL implementation at a Spanish university: A pilot experience Authors: Aguilar Pérez, Marta; Rodríguez Montañés, Rosa; Oriol, Carlos Wed, 28 Sep 2011 11:39:43 GMT http://hdl.handle.net/2117/13378 2011-09-28T11:39:43Z Aguilar Pérez, Marta; Rodríguez Montañés, Rosa; Oriol, Carlos no http://hdl.handle.net/2117/11989 Title: Defective Behaviour of an 8T SRAM Cell with Open Defects Authors: Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Manich Bou, Salvador; Figueras Pàmies, Joan; Di Carlo, Stefano; Prinetto, Paolo; Scionti, Alberto Mon, 21 Mar 2011 13:55:57 GMT http://hdl.handle.net/2117/11989 2011-03-21T13:55:57Z Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Manich Bou, Salvador; Figueras Pàmies, Joan; Di Carlo, Stefano; Prinetto, Paolo; Scionti, Alberto no http://hdl.handle.net/2117/11966 Title: Parametric Failure Analysis of Embedded SRAMs using Fast & Accurate Dynamic Analysis Authors: Vatajelu, Elena Ioana; Panagopoulos, Georgios; Roy, Kaushik; Figueras Pàmies, Joan Fri, 18 Mar 2011 16:08:09 GMT http://hdl.handle.net/2117/11966 2011-03-18T16:08:09Z Vatajelu, Elena Ioana; Panagopoulos, Georgios; Roy, Kaushik; Figueras Pàmies, Joan no http://hdl.handle.net/2117/11965 Title: Statistical analysis of SRAM aarametric failure under supply voltage scaling Authors: Vatajelu, Elena Ioana; Figueras Pàmies, Joan Fri, 18 Mar 2011 15:47:08 GMT http://hdl.handle.net/2117/11965 2011-03-18T15:47:08Z Vatajelu, Elena Ioana; Figueras Pàmies, Joan no http://hdl.handle.net/2117/11964 Title: Robustness of SRAM to Power Supply Noise during Leakage Power Saving in DVS Authors: Vatajelu, Elena Ioana; Renovell, Michel; Figueras Pàmies, Joan Fri, 18 Mar 2011 14:50:03 GMT http://hdl.handle.net/2117/11964 2011-03-18T14:50:03Z Vatajelu, Elena Ioana; Renovell, Michel; Figueras Pàmies, Joan no http://hdl.handle.net/2117/9039 Title: A Single Conductive Surface as Communication Media for Networked Devices Authors: Rius Vázquez, José Abstract: This paper shows the feasibility to build a network of electronic devices communicating over a single conductive surface. It analyzes the expected magnitude of the signal received as a function of distance and electrical parameters of the conductive surface, as well as presents measured results on surfaces from 0.4 to 2.56 m2 with sheet resistances from 77 to 1462 ohms per square. Prototype transceivers connected over a conductive surface have been able to communicate at 100 kbit/s at a distance of 2m. Potential applications of this approach for Body Area Networks include e-textiles and health monitoring. Wed, 22 Sep 2010 14:02:55 GMT http://hdl.handle.net/2117/9039 2010-09-22T14:02:55Z Rius Vázquez, José no This paper shows the feasibility to build a network of electronic devices communicating over a single conductive surface. It analyzes the expected magnitude of the signal received as a function of distance and electrical parameters of the conductive surface, as well as presents measured results on surfaces from 0.4 to 2.56 m2 with sheet resistances from 77 to 1462 ohms per square. Prototype transceivers connected over a conductive surface have been able to communicate at 100 kbit/s at a distance of 2m. Potential applications of this approach for Body Area Networks include e-textiles and health monitoring. http://hdl.handle.net/2117/7850 Title: Two-Dimensional Communication of Networked Devices Through a Single Conductive Surface Authors: Rius Vázquez, José Abstract: This paper shows the possibility of two-dimensional communication between electronic devices by using only one conductive surface. An analysis of the expected magnitude of the signal at the reception point as a function of distance and electrical parameters of the conductive surface is presented. Measurements on surfaces from 0.4 to 2.56 m2 and with sheet resistances from 77 to 1462 ohm/square prove the correctness of this analysis. In addition, practical rules to locate and orient the transceivers are given. Prototype transceivers connected to a plane with one conductive surface able to communicate at 100Kbit/s at a distance of 2m are described. Fri, 25 Jun 2010 16:47:11 GMT http://hdl.handle.net/2117/7850 2010-06-25T16:47:11Z Rius Vázquez, José no This paper shows the possibility of two-dimensional communication between electronic devices by using only one conductive surface. An analysis of the expected magnitude of the signal at the reception point as a function of distance and electrical parameters of the conductive surface is presented. Measurements on surfaces from 0.4 to 2.56 m2 and with sheet resistances from 77 to 1462 ohm/square prove the correctness of this analysis. In addition, practical rules to locate and orient the transceivers are given. Prototype transceivers connected to a plane with one conductive surface able to communicate at 100Kbit/s at a distance of 2m are described.