Exploració per tema "p-type Crystalline wafer"
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Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
(American Institute of Physics, 2005-11-09)
Article
Accés restringit per política de l'editorialSurface passivation of p-type crystalline silicon wafers by means of phosphorus-doped hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we focused on the effects of layer ...