Exploració per tema "p-n heterojunctions"
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Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes
(American Institute of Physics, 2003-08-15)
Article
Accés restringit per política de l'editorialP1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical ...