Exploració per tema "high electron mobility transistors"

Ara es mostren els items 1-5 de 5

    • Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model 

      Lázaro Guillén, Antoni; Maya Sánchez, Mª del Carmen; Pradell i Cara, Lluís (JOHN WILEY & SONS INC, 2003-11-30)
      Article
      Accés obert
      The bias-dependence of microwave-FET intrinsic noise sources in their hybrid configuration is theoretically determined, using a new quasi-2D (Q-2D) physical model based on Thornber's current equation [8]. It is shown that ...

    • Direct extraction of all four transistor noise parameters from 50 noise figure measurements 

      Lázaro Guillén, Antoni; Pradell i Cara, Lluís; Beltrán, A.; O'Callaghan Castellà, Juan Manuel (IEE, 1998-02-05)
      Article
      Accés obert
      A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22INT, Re(C12INT), Im(C12INT)) by fitting the ...

    • Method for measuring noise parameters of microwave two-port 

      Lázaro Guillén, Antoni; Pradell i Cara, Lluís; O'Callaghan Castellà, Juan Manuel (IEE, 1998-06-30)
      Article
      Accés obert
      A new tuner-based method for measuring the four noise-parameters of a two-port is proposed. It makes use of a novel measurement ratio that includes noise powers and mismatch factors simultaneously. In contrast to previous ...

    • Model predicts large-signal modfet performance 

      O'Callaghan Castellà, Juan Manuel; Beyer, J. B. (PENTON MEDIA, INC, 1989-11-30)
      Article
      Accés obert
      Modulation doped FETs (MODFETs) provide low-noise performance in many medium- and high-power microwave applications. Unfortunately, there are few large-signal models available for MODFETs, and determining the parameters ...

    • Planck-LFI 44-GHz back end module 

      Aja, Beatriz; Pascual, Juan Pablo; Fuente, Luisa de la; Detratti, M.; Artal Latorre, Eduardo; Mediavilla, Asier; Paco Sánchez, Pedro Antonio de; Pradell i Cara, Lluís (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2005-10-31)
      Article
      Accés obert
      This work describes the principle of operation, assembly and performance of one branch of the 44 GHz back end module (BEM) for the Planck low frequency instrument (LFI). This subsystem constitutes a fully representative ...