• Monolithic sensor integration in CMOS technologies 

      Fernández, Daniel; Michalik, Piotr; Valle Fraga, Juan José; Banerji, Saoni; Sánchez Chiva, José María; Madrenas Boadas, Jordi (Institute of Electrical and Electronics Engineers (IEEE), 2022-12-09)
      Article
      Accés obert
      Besides being mainstream for mixed-signal electronics, CMOS technology can be used to integrate micro-electromechanical system (MEMS) on a single die, taking advantage of the structures and materials available in feature ...
    • P3R-3 design and characterization of air coupled ultrasonic transducers based on MUMPs 

      Martínez Graullera, Óscar Fernando; Martín Arguedas, Carlos Julián; Gómez-Ullate Alvear, Luis; Domínguez Pumar, Manuel (Institute of Electrical and Electronics Engineers (IEEE), 2007)
      Text en actes de congrés
      Accés obert
      This paper deals with the design and characterization of several capacitive micromachined ultrasonic transducer (cMUT) cells for the future design of an air-coupled transducer for non destructive testing (NDT). Each design ...
    • Polymer-based micromachined rectangular coaxial filters for millimeter-wave applications 

      Jaimes Vera, Edith Aline; Llamas Garro, Ignacio; Ke, M.; Wang, Y.; Lancaster, Michael J.; Pradell i Cara, Lluís (2011-04)
      Article
      Accés restringit per política de l'editorial
      In this paper, micromachined devices for millimeter-wave applications at U- and V-bands are presented. These structures are designed using a rectangular coaxial line built of gold-coated SU-8 photoresist layers, where the ...
    • Silicon microlens antenna for multi-pixel THz heterodyne detector arrays 

      Lee, Choonsup; Chattopadhyay, Goutam; Jung, Cecile; Reck, Theodore; Cooper, Ken; Peralta, Alex; Lin, Robert; Mehdi, Imran; Alonso del Pino, María; Llombart Juan, Nuria (Institute of Electrical and Electronics Engineers (IEEE), 2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Silicon micromachined RF passive components such as washers, waveguide with 90 degree bends for 325-500 GHz band, and silicon-stacked blocks for W-band (75-110 GHz) GaAs power amplifiers have been designed, microfabricated, ...
    • Terahertz antennas with silicon micromachined front-end 

      Chattopadhyay, Goutam; Reck, Theodore; Jung Kubiak, Cecile; Lee, Choonsup; Siles, Jose Vicente; Chahat, Naser; Cooper, Ken; Schlecht, Erich T.; Alonso del Pino, María; Mehdi, Imran (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Increasingly, terahertz systems are being used for multi-pixel receivers for different applications from mapping the star-forming regions of galaxies to stand-off radar imaging. Since microstrip patch antennas are too lossy ...