Exploració per tema "Metal oxide semiconductor field-effect transistors"

Ara es mostren els items 1-15 de 15

    • Caracterización automatizada de sistemas fotovoltaicos conectados a red 

      Berlanga Herrera, Luis (Universitat Politècnica de Catalunya, 2015-02-16)
      Treball Final de Grau
      Accés obert
      [ANGLÈS] The main objective is the implementation of an automated system for the characterization of grid connected photovoltaic applications. This project arises by the need of automating the configuration and the measures ...

    • Design of a test methodology for the analysis of derating rules in space power devices 

      Tutusaus Lleixà, Miquel (Universitat Politècnica de Catalunya, 2023-07-13)
      Projecte Final de Màster Oficial
      Accés restringit per acord de confidencialitat
      Realitzat a/amb:   Institut de Microelectrònica de Barcelona
      Derating of power devices is an essential tool for increasing the lifetime of power converters in space application, where the long-term reliability specifications are very strict. Nevertheless, there is a lack of ...

    • Design of AC-DC power converters with LCL + tuned trap line filter using Si IGBT and SiC MOSFET modules 

      Piasecki, S.; Mir Cantarellas, Antonio; Rabkowski, J.; Rodríguez Cortés, Pedro (2013)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper presents a method for improving the design procedure of AC-DC power converters for power generation applications. The proposed methodology is based on selection of the most convenient configuration, in terms ...

    • Disseny i implementació d'una font d'alimentació commutada per màquines de tatuar amb topologia flyback i bateries de liti 

      Pulido Martín, Eugeni (Universitat Politècnica de Catalunya, 2016)
      Projecte/Treball Final de Carrera
      Accés obert
      Within this Final Degree Project ,a SMPS flyback power supply feeded with lithium batteries will carry out. Moreover , the Power supply will be build using a Demonstration Circuit board supplied by Linear Technologies , ...

    • Efficiency comparison between SiC- and Si-based active neutral-point clamped converters 

      Nicolás Apruzzese, Joan; Maset, Enrique; Busquets Monge, Sergio; Esteve, Vicente; Bordonau Farrerons, José; Calle Prado, Alejandro; Jordán, José (2015)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide ...

    • Electromagnetic compatibility of CMOS circuits along the lifetime 

      Fernández García, Raúl; Ruiz, José María; Gil Galí, Ignacio; Morata Cariñena, Marta (2011)
      Comunicació de congrés
      Accés obert
      The continuous scaling of CMOS circuits has set the MOSFET transistor in the nanoelectronic era. In this context, the functionality and complexity of integrated circuits (ICs) are growing up. However, the operation voltage ...

    • Estudio, implementación y aplicación de transistores MOSFET con tecnología carburo de silicio 

      Zaera Moro, Lluc (Universitat Politècnica de Catalunya, 2020-06)
      Treball Final de Grau
      Accés restringit per acord de confidencialitat

    • Experimental verification of the usefulness of the n-th power law MOSFET model under hot carrier wearout 

      Berbel Artal, Néstor; Fernández García, Raúl; Gil Galí, Ignacio; Li, B.; Boyer, A.; BenDhia, S. (2011-09-16)
      Article
      Accés obert
      In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under ...

    • Hot spot detection in integrated circuits laterally accessing to the substrate 

      Perpiñà, Xavier; Altet Sanahujes, Josep; Jordà, Xavier; Vellvehi, Miquel (2010)
      Text en actes de congrés
      Accés obert
      Thermal management of nano estructures requires the use of temperature monitoring strategies. In this work we expose a strategy bases on sensing the heat-flux within the chip substrate with a probe-laser beam. As the beam ...

    • Location of hot spots in integrated circuits by monitoring the substrate thermal-phase lag with the mirage effect 

      Perpiñà, Xavier; Altet Sanahujes, Josep; Jordà, Xavier; Vellvehi, Miquel; Mestres, Narcís (2010)
      Article
      Accés obert
      This Letter presents a solution for locating hot spots in active integrated circuits (IC) and devices. This method is based on sensing the phase lag between the power periodically dissipated by a device integrated in an ...

    • MOSFET degradation dependence on input signal power in a RF power amplifier 

      Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
      Article
      Accés obert
      Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ...

    • MOSFET dynamic thermal sensor for IC testing applications 

      Reverter Cubarsí, Ferran; Perpiñà Gilabet, Xavier; Barajas Ojeda, Enrique; León, Javier; Vellvehi, Miquel; Jordà, Xavier; Altet Sanahujes, Josep (2016-05-01)
      Article
      Accés obert
      This paper analyses how a single metal-oxide-semiconductor field-effect transistor (MOSFET) can be employed as a thermal sensor to measure on-chip dynamic thermal signals caused by a power-dissipating circuit under test ...

    • Power MOSFET State Of Health prediction 

      Aliagas Puigdomènech, Gerard (Universitat Politècnica de Catalunya, 2019-06)
      Treball Final de Grau
      Accés restringit per acord de confidencialitat

    • Ring oscillator switching noise under NBTI wearout 

      Fernández García, Raúl; Gil Galí, Ignacio; Ruiz, José María; Morata Cariñena, Marta (2011)
      Text en actes de congrés
      Accés obert
      In this paper the switching noise of a CMOS ring oscillator has been analysed when their pFETs are subjected to negative bias temperature instability (NBTI). The impact of pFET under NBTI has been experimentally quantified ...

    • Toward understanding the wide distribution of time scales in negative bias temperature instability 

      Kaczer, Ben; Grasser, Tibor; Fernández García, Raúl; Groeseneken, Guido (2007)
      Capítol de llibre
      Accés restringit per política de l'editorial