Exploració per tema "Memory reliability"

Ara es mostren els items 1-2 de 2

    • CRC-based memory reliability for task-parallel HPC applications 

      Subasi, Omer; Unsal, Osman Sabri; Labarta Mancho, Jesús José; Yalcin, Gulay; Cristal Kestelman, Adrián (Institute of Electrical and Electronics Engineers (IEEE), 2016)
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      Memory reliability will be one of the major concerns for future HPC and Exascale systems. This concern is mostly attributed to the expected massive increase in memory capacity and the number of memory devices in Exascale ...

    • Reliability estimation at block-level granularity of spin-transfer-torque MRAMs 

      Di Carlo, Stefano; Indaco, Marco; Prinetto, Paolo; Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2014)
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      Accés restringit per política de l'editorial
      In recent years, the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. Under ...