Exploració per tema "Laser doping"
Ara es mostren els items 1-8 de 8
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Base contacts and selective emitters processed by laser doping technique for p-type IBC c-Si solar cells
(2015-08-28)
Article
Accés obertAbstract In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as ... -
c-Si solar cells based on laser-processed dielectric films
(2014-09)
Article
Accés restringit per política de l'editorialThis paper shows an innovative and low temperature fabrication technology for crystalline silicon (c-Si) solar cells where the highly-doped regions are punctually defined through laser processed dielectric films. ... -
Multicrystalline silicon thin-film solar cells based on vanadium oxide heterojunction and laser-doped contacts
(2019-10)
Article
Accés obertLiquid phase crystallized (LPC) silicon thin films on glass substrates are a feasible alternative to conventional crystalline silicon (c-Si) wafers for solar cells. Due to substrate limitation, a low-temperature technology ... -
N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices
(2022-01-01)
Article
Accés obertIn this article, a method for phosphorous (n-type) doping of germanium based on spin-on dopant sources and Pulsed Laser Melting (PLM) throughout an amorphous silicon carbide (a-SixC1-x:H) layer, which provides both surface ... -
Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts
(2014-09)
Article
Accés restringit per política de l'editorialIn this work 3D simulations are used to study the impact of technological parameters on device performance of c-Si interdigitated back-contacted IBC solar cells with point-like doped contacts. In these cells, the highly-doped ... -
Silicon nitride layers for DopLa-IBC solar cells
(Institute of Electrical and Electronics Engineers (IEEE), 2017)
Text en actes de congrés
Accés restringit per política de l'editorialIn this work, we report on the development of silicon nitride (SiNx) layers to be applied to crystalline silicon high-efficiency solar cells. In particular, our research group has developed the concept of Doped by Laser ... -
Silicon solar cells with heterojunction emitters and laser processed base contacts
(Elsevier, 2017)
Comunicació de congrés
Accés obertIn this work, we report on a novel structure of Interdigitated Back-Contacted (IBC) solar cells on c-Si p-type substrates that combines laser processed homojunction base contacts and silicon heterojunction ... -
TCO-free low-temperature p+ emitters for back-junction c-Si solar cells
(Elsevier, 2015-08-28)
Article
Accés obertIn this work, we report on the fabrication and characterization of n-type c-Si solar cells whose p+ emitters are based on laser processed aluminum oxide/silicon carbide (Al2O3/SiCx) films. The p+ emitter is defined at the ...