• Hole Transport Layer based on atomic layer deposited V2Ox films: paving the road to semi-transparent CZTSe solar cells 

      Almache Hernández, Rosa Estefanía; Pusay Villarroel, Benjamín Andrés; Tiwari, Kunal Jogendra; Ros, Eloi; Masmitjà Rusiñol, Gerard; Becerril Romero, Ignacio; Martín García, Isidro; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Saucedo Silva, Edgardo Ademar; Ortega Villasclaras, Pablo Rafael (2021-09-15)
      Article
      Accés obert
      This work explores the use of very thin transparent vanadium oxide films deposited by atomic layer deposition (ALD) technique as hole transport layer for CZTSe solar cells as alternative of opaque molybdenum based contacts. ...
    • Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet 

      Cheylan, Stephanie; Puigdollers i González, Joaquim; Bolink, Henk J.; Coronado Miralles, Eugenio; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Badenes Guia, Gonçal (American Institute of Physics, 2008-05-14)
      Article
      Accés restringit per política de l'editorial
      Thin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. ...
    • Influence of wavelength and pulse duration on the selective laser ablation of WOx, VOx and MoOx thin films 

      Muñoz García, Cristina; Canteli, David; Lauzurica, Sara; Morales, Miguel; Molpeceres Alvarez, Carlos; Ros Costals, Eloi; Ortega Villasclaras, Pablo Rafael; López González, Juan Miguel; Voz Sánchez, Cristóbal (Elsevier, 2022-02-01)
      Article
      Accés obert
      In this paper, we present a study of the laser scribing of WOx, VOx, and MoOx films, deposited onto crystalline silicon, with three different wavelengths (355 nm, 532 nm, and 1064 nm) and in two temporal regimes in pulse ...
    • Patterning of WOx, VOx, and MoOx thin-films with picosecond and nanosecond laser sources 

      Muñoz García, Cristina; Canteli, David; Lauzurica, Sara; Morales Furio, Miguel; Molpeceres Alvarez, Carlos; Ros Costals, Eloi; Ortega Villasclaras, Pablo Rafael; López González, Juan Miguel; Voz Sánchez, Cristóbal (Elsevier, 2022)
      Text en actes de congrés
      Accés obert
      Transition metal oxide (TMOs) layers have interesting properties as selective contacts, i.e., hole or electron transport layers for novel semiconductor devices. Especially, oxides of molybdenum (MoO3), vanadium (V2O5), and ...