Exploració per tema "Hole transport layer"
Ara es mostren els items 1-4 de 4
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Hole Transport Layer based on atomic layer deposited V2Ox films: paving the road to semi-transparent CZTSe solar cells
(2021-09-15)
Article
Accés obertThis work explores the use of very thin transparent vanadium oxide films deposited by atomic layer deposition (ALD) technique as hole transport layer for CZTSe solar cells as alternative of opaque molybdenum based contacts. ... -
Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet
(American Institute of Physics, 2008-05-14)
Article
Accés restringit per política de l'editorialThin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. ... -
Influence of wavelength and pulse duration on the selective laser ablation of WOx, VOx and MoOx thin films
(Elsevier, 2022-02-01)
Article
Accés obertIn this paper, we present a study of the laser scribing of WOx, VOx, and MoOx films, deposited onto crystalline silicon, with three different wavelengths (355 nm, 532 nm, and 1064 nm) and in two temporal regimes in pulse ... -
Patterning of WOx, VOx, and MoOx thin-films with picosecond and nanosecond laser sources
(Elsevier, 2022)
Text en actes de congrés
Accés obertTransition metal oxide (TMOs) layers have interesting properties as selective contacts, i.e., hole or electron transport layers for novel semiconductor devices. Especially, oxides of molybdenum (MoO3), vanadium (V2O5), and ...