Exploració per tema "Field-effect transistors"
Ara es mostren els items 1-9 de 9
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A Method for the Determination of a Distributed FET Noise-Model Based on Matched-Source Noise-Figure Measurements
(JOHN WILEY & SONS INC, 2004-05-31)
Article
Accés obertA new method for the determination of a distributed FET noise model is presented. It is based on the extraction of the intrinsic noise-correlation matrix of an elemental section of the device from the device's noise figure, ... -
Bias-dependence of FET intrinsic noise sources, determined with a quasi-2D model
(JOHN WILEY & SONS INC, 2003-11-30)
Article
Accés obertThe bias-dependence of microwave-FET intrinsic noise sources in their hybrid configuration is theoretically determined, using a new quasi-2D (Q-2D) physical model based on Thornber's current equation [8]. It is shown that ... -
Characterization and modeling of organic thin-film transistors based pi-conjugated small molecule tetraphenyldibenzoperiflanthene: effects of channel length
(2016-07-01)
Article
Accés obertP-type organic thin film transistors (OTFTs) with different channel lengths have been fabricated and characterized by thermal evaporation using the small tetraphenyldibenzoperiflanthene (DBP) as an active material on Si/SiO2 ... -
Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties
(2011)
Article
Accés restringit per política de l'editorialWe report a joint experimental and theoretical study on the electronic structure and the solid-state organisation of bis(naphthoquinone)-tetrathiafulvalene (BNQ-TTF) as a promising ambipolar semiconductor. Accordingly, ... -
Experimental study and analytical modeling of the channel length influence on the electrical characteristics of small-molecule thin-film transistors
(2015-07-01)
Article
Accés obertBottom-contact p-type small-molecule copper phthalocyanine (CuPc) thin film transistors (TFTs) with different channel lengths have been fabricated by thermal evaporation. The influence of the channel length on the ... -
Insights into tunnel FET-based charge pumps and rectifiers for energy harvesting applications
(2017-03-01)
Article
Accés obertIn this paper, the electrical characteristics of tunnel field-effect transistor (TFET) devices are explored for energy harvesting front-end circuits with ultralow power consumption. Compared with conventional thermionic ... -
Measurement of on-wafer transistor noise parameters without a tuner using unrestricted noise sources
(HORIZON HOUSE PUBLICATIONS INC, 2002-03-31)
Article
Accés obertThe authors present a method for calibrating the four noise parameters of a noise receiver which does not require a tuner The method permits using general (mismatched) noise sources, which may present very different source ... -
RF performance projections of graphene FETs vs. silicon MOSFETs
(2012-08)
Article
Accés obertA graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind ... -
Toward understanding the wide distribution of time scales in negative bias temperature instability
(2007)
Capítol de llibre
Accés restringit per política de l'editorial