• A novel active gate driver for improving SiC MOSFET switching trajectory 

      Paredes Camacho, Alejandro; Sala Caselles, Vicenç; Ghorbani, Hamidreza; Romeral Martínez, José Luis (Institute of Electrical and Electronics Engineers (IEEE), 2017-11-01)
      Article
      Accés obert
      The trend in power electronic applications is to reach higher power density and higher efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC MOSFET) are of great interest because they can ...
    • Improvement of driver to gate coupling circuits for SiC MOSFETS 

      Balcells Sendra, Josep; Mon González, Juan; Lamich Arocas, Manuel; Laguna, Alberto (Institute of Electrical and Electronics Engineers (IEEE), 2014)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      This work presents a study of the influence of different gate driver circuits on the switching behavior of SiC MOSFET devices used in a buck converter. The paper is based on several tests performed to determine the switching ...