• n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers 

      Ferré Tomas, Rafel; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Vetter, Michael; Torres, I.; Alcubilla González, Ramón (American Institute of Physics, 2006-10-05)
      Article
      Accés restringit per política de l'editorial
      Emitter saturation current densities (JOe) of phosphorus-diffused planar c-Si solar cell emitters passivated by silicon carbide (SiCx) layers have been determined in a wide sheet resistance range (20-500 Ω/sp). Phosphorus ...