Exploració per autor "Roiati, V."

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    • N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacks 

      Orpella García, Alberto; Blanqué, Servane; Roiati, V.; Martín García, Isidro; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Alcubilla González, Ramón (IEEE Press. Institute of Electrical and Electronics Engineers, 2009-02-11)
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      This paper studies the passivation of industrially textured deep silicon emitters using amorphous silicon carbonitride layers in stack configuration, deposited by plasma enhanced chemical vapor deposition. With this ...