Exploració per autor "Eichenberger, Stefan"
Ara es mostren els items 1-4 de 4
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Diagnosis of full open defects in interconnect lines with fan-out
Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan; Eichenberger, Stefan; Hora, C.; Kruseman, Bram (IEEE Press. Institute of Electrical and Electronics Engineers, 2010-05-24)
Text en actes de congrés
Accés obertThe development of accurate diagnosis methodologies is important to solve process problems and achieve fast yield improvement. As open defects are common in CMOS technologies, accurate diagnosis of open defects becomes ... -
Diagnosis of full open defects in interconnecting lines
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Eichenberger, Stefan; Hora, Camelia; Kruseman, Bram; Lousberg, M.; Majhi, A.K. (IEEE, 2007-05-31)
Text en actes de congrés
Accés obertA proposal for enhancing the diagnosis of full open defects in interconnecting lines of CMOS circuits is presented. The defective line is first classified as fully opened by means of a logic-based diagnosis tool (Faloc). ... -
Gate leakage impact on full open defects in interconnect lines
Arumi Delgado, Daniel; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan; Eichenberger, Stefan; Hora, Camelia; Kruseman, Bram (2011-06)
Article
Accés obertAn Interconnect full open defect breaks the connection between the driver and the gate terminals of downstream transistors, generating a floating line. The behavior of floating lines is known to depend on several factors, ... -
Localization and electrical characterization of interconnect open defects
Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Figueras Pàmies, Joan; Beverloo, Willem; Vries, Dirk K. de; Eichenberger, Stefan; Volf, Paul A. J. (2010-02)
Article
Accés obertA technique for extracting the electrical and topological parameters of open defects in process monitor lines is presented. The procedure is based on frequency-domain measurements performed at both end points of the ...