Exploració per autor "Renovell, Michel"

Ara es mostren els items 4-6 de 6

    • SRAM cell stability metric under transient voltage noise 

      Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan (2013-12-20)
      Article
      Accés restringit per política de l'editorial

    • SRAM stability metric under transient noise 

      Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan (2012)
      Text en actes de congrés
      Accés obert
      ventional way to analyze the robustness of an SRAM bit cell is to quantify its immunity to static noise. The static immunity to disturbances like process and mi smatch variations, bulk noises, supply rings variations, ...

    • Transient noise failures in SRAM cells: dynamic noise margin metric 

      Vatajelu, Elena Ioana; Gómez Pau, Álvaro; Renovell, Michel; Figueras Pàmies, Joan (IEEE Computer Society Publications, 2011)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Current nanometric IC processes need to assess the robustness of memories under any possible source of disturbance: process and mismatch variations, bulk noises, supply rings variations, temperature changes, aging and ...