• Defective Behaviour of an 8T SRAM Cell with Open Defects 

      Rodríguez Montañés, Rosa; Arumi Delgado, Daniel; Manich Bou, Salvador; Figueras Pàmies, Joan; Di Carlo, Stefano; Prinetto, Paolo; Scionti, Alberto (2010)
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    • Power-aware voltage tuning for STT-MRAM reliability 

      Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Di Carlo, Stefano; Renovell, Michel; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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      One of the most promising emerging memory technologies is the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM), due to its high speed, high endurance, low area, low power consumption, and good scaling capability. ...
    • Read/write robustness estimation metrics for spin transfer torque (STT) MRAM cell 

      Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Indaco, Marco; Renovell, Michel; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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      The rapid development of low power, high density, high performance SoCs has pushed the embedded memories to their limits and opened the field to the development of emerging memory technologies. The Spin- Transfer-Torque ...
    • Reliability estimation at block-level granularity of spin-transfer-torque MRAMs 

      Di Carlo, Stefano; Indaco, Marco; Prinetto, Paolo; Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2014)
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      In recent years, the Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has emerged as a promising choice for embedded memories due to its reduced read/write latency and high CMOS integration capability. Under ...
    • S4 - Real-Time Control-Flow Integrity for Multicore Mixed-Criticality IoT Systems 

      Eftekhari Moghadam, Vahid; Prinetto, Paolo; Roascio, Gianluca (2022-05)
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      The spread of the Internet of Things (IoT) and the use of smart control systems in many mission-critical or safetycritical applications domains, like automotive or aeronautical, make devices attractive targets for ...
    • STT-MRAM cell reliability evaluation under process, voltage and temperature (PVT) variations 

      Vatajelu, Elena Ioana; Rodríguez Montañés, Rosa; Indaco, Marco; Prinetto, Paolo; Figueras Pàmies, Joan (Institute of Electrical and Electronics Engineers (IEEE), 2015)
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      The CMOS based memories are facing major issues with technology scaling, such as decreased reliability and increased leakage power. A point will be reached when the technology scaling issues will overweight the benefits. ...