Exploració per autor "Mas Torrent, Marta"

Ara es mostren els items 4-8 de 8

    • Electronic and structural characterisation of a tetrathiafulvalene compound as a potential candidate for ambipolar transport properties 

      Oton, Francisco; Pfattner, Raphael; Pavlica, Egon; Olivier, Yoann; Bratina, Gvido; Cornil, Jerome; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Fontrodona, Xavier; Mas Torrent, Marta; Veciana Miró, Jaume; Rovira Angulo, Concepció (2011)
      Article
      Accés restringit per política de l'editorial
      We report a joint experimental and theoretical study on the electronic structure and the solid-state organisation of bis(naphthoquinone)-tetrathiafulvalene (BNQ-TTF) as a promising ambipolar semiconductor. Accordingly, ...

    • Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor 

      Moreno Sierra, César; Pfattner, Raphael; Mas Torrent, Marta; Puigdollers i González, Joaquim; Bromley, Stephan; Rovira, Concepció; Alcubilla González, Ramón; Veciana, Jaume (2011-11-16)
      Article
      Accés restringit per política de l'editorial
      Theoretical and experimental investigations combining in situ Kelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) ...

    • HOMO stabilisation in pi-Extended Dibenzotetrathiafulvalene derivatives for their application in OFETs 

      Geng, Yan; Pfattner, Raphael; Campos García, Antonio; Wang, Wei; Jeannin, Olivier; Hauser, Jürg; Puigdollers i González, Joaquim; Bromley, Stefan T.; Decurtins, Silvio; Veciana Miró, Jaume; Rovira Angulo, Concepció; Mas Torrent, Marta; Liu, Shixia (2014-05-15)
      Article
      Accés restringit per política de l'editorial
      Three new organic semiconductors, in which either two methoxy units are directly linked to a dibenzotetrathiafulvalene (DB-TTF) central core and a 2,1,3-chalcogendiazole is fused on the one side, or four methoxy groups are ...

    • Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor 

      Campos García, Antonio; Riera Galindo, Sergi; Puigdollers i González, Joaquim; Mas Torrent, Marta (2018-04-19)
      Article
      Accés obert
      Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type ...

    • Restraints in low dimensional organic semiconductor devices at high current densities 

      Pfattner, Raphael; Moreno Sierra, César; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Rovira, Concepció; Puigdollers i González, Joaquim; Mas Torrent, Marta (2014-01)
      Article
      Accés restringit per política de l'editorial
      The understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work ...