Ara es mostren els items 5-15 de 15

    • Impact of finfet and III-V/Ge technology on logic and memory cell behavior 

      Amat Bertran, Esteve; Calomarde Palomino, Antonio; García Almudéver, Carmen; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2013-11-20)
      Article
      Accés restringit per política de l'editorial
      In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios ...
    • Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario 

      García Almudéver, Carmen; Rubio Sola, Jose Antonio (2011)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. New nanoscale beyond-CMOS devices are being studied such as carbon ...
    • Mitigation strategies of the variability in 3T1D cell memories scaled beyond 22nm 

      Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2012)
      Text en actes de congrés
      Accés obert
      3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability. In this contribution, we have shown that 22nm 3T1D memory cells present significant ...
    • On double full-stack communications-enabled architectures for multi-core quantum computers 

      Rodrigo Muñoz, Santiago; Abadal Cavallé, Sergi; Alarcón Cot, Eduardo José; Bandic, Medina; van Someren, Hans; García Almudéver, Carmen (2021-09)
      Article
      Accés obert
      Despite its tremendous potential, it is still unclear how quantum computing will scale to satisfy the requirements of its most powerful applications. Among other issues, there are hard limits to the number of qubits that ...
    • Scaling of multi-core quantum architectures: a communications-aware structured gap analysis 

      Rodrigo Muñoz, Santiago; Bandic, Medina; Abadal Cavallé, Sergi; van Someren, Hans; Alarcón Cot, Eduardo José; García Almudéver, Carmen (Association for Computing Machinery (ACM), 2021)
      Text en actes de congrés
      Accés obert
      In the quest of large-scale quantum computers, multi-core distributed architectures are considered a compelling alternative to be explored. A crucial aspect in such approach is the stringent demand on communication among ...
    • Shape-shifting digital hardware concept: towards a new adaptive computing system 

      Rubio Sola, Jose Antonio; García Almudéver, Carmen; Martin, Javier; Crespo, A.; Rodriguez, Rosa; Nafría Maqueda, Montserrat (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
      Comunicació de congrés
      Accés restringit per política de l'editorial
      In this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented ...
    • Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm 

      Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich, N.; Canal Corretger, Ramon; Rubio Sola, Jose Antonio (2014-10-01)
      Article
      Accés obert
      3T1D cell has been stated as a valid alternative to be implemented on L1 memory cache to substitute 6T, highly affected by device variability as technology dimensions are reduced. In this work, we have shown that 22 nm ...
    • Systematic and random variability analysis of two different 6T-SRAM layout topologies 

      Amat Bertran, Esteve; Amatlle, E.; Gómez González, Sergio; Aymerich Capdevila, Nivard; García Almudéver, Carmen; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (2013-09)
      Article
      Accés obert
    • Variability and reliability analysis of carbon nanotube technology in the presence of manufacturing imperfections 

      García Almudéver, Carmen (Universitat Politècnica de Catalunya, 2014-07-29)
      Tesi
      Accés obert
      In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four years later, Kahng and Atalla invented the MOSFET. Since that time, it has become the most widely used type of transistor in ...
    • Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuation 

      García Almudéver, Carmen; Rubio Sola, Jose Antonio (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is the presence of density variations in CNT growth. These variations are due to the lack of precise control of CNT location ...
    • Will quantum computers scale without inter-chip comms? A structured design exploration to the monolithic vs distributed architectures quest 

      Rodrigo Muñoz, Santiago; Abadal Cavallé, Sergi; Alarcón Cot, Eduardo José; García Almudéver, Carmen (Institute of Electrical and Electronics Engineers (IEEE), 2020)
      Text en actes de congrés
      Accés obert
      Being a very promising technology, with impressive advances in the recent years, it is still unclear how quantum computing will scale to satisfy the requirements of its most powerful applications. Although continued progress ...