Exploració per autor "Nafría Maqueda, Montserrat"Més informació

Ara es mostren els items 17-20 de 20

    • Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects 

      Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios; Salvador, Emili; Pedro, Marta; Crespo-Yepes, A.; Martin Martinez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-04)
      Article
      Accés obert
      Resistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commerciali ...

    • Shape-shifting digital hardware concept: towards a new adaptive computing system 

      Rubio Sola, Jose Antonio; García Almudéver, Carmen; Martin, Javier; Crespo, A.; Rodriguez, Rosa; Nafría Maqueda, Montserrat (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
      Comunicació de congrés
      Accés restringit per política de l'editorial
      In this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented ...

    • Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells 

      Martinez, Javier; Rodriguez, Rosa; Nafría Maqueda, Montserrat; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
      Text en actes de congrés
      Accés restringit per política de l'editorial
      Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is ...

    • Stochastic resonance effect in binary STDP performed by RRAM devices 

      Salvador Aguilera, Emili; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Crespo Yepes, Albert; Miranda Castellano, Enrique Alberto; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio; Ntinas, Vasileios; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2022)
      Text en actes de congrés
      Accés obert
      The beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron ...