Exploració per autor "Nafría Maqueda, Montserrat"
Ara es mostren els items 14-20 de 20
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Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements
Crespo Yepes, Albert; Ramos Hortal, Regina; Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-10-01)
Article
Accés obertIn this work, an ‘on-the-fly’ measurement technique for the monitoring of CMOS inverters performance degradation is presented. This technique allows the characterization of the circuit degradation simultaneously with the ... -
MOSFET degradation dependence on input signal power in a RF power amplifier
Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2017-06-25)
Article
Accés obertAging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors ... -
Noise-induced Performance Enhancement of Variability-aware Memristor Networks
Ntinas, Vasileios; Fyrigos, Iosif; Sirakoulis, Georgios; Rubio Sola, Jose Antonio; Martin Martinez, Javier; Rodriguez, Rosana; Nafría Maqueda, Montserrat (2019)
Text en actes de congrés
Accés restringit per política de l'editorialMemristor networks are capable of low-power, massive parallel processing and information storage. Moreover, they have widely used for a vast number of intelligent data analysis applications targeting mobile edge devices ... -
Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects
Ntinas, Vasileios; Rubio Sola, Jose Antonio; Sirakoulis, Georgios; Salvador, Emili; Pedro, Marta; Crespo-Yepes, A.; Martin Martinez, Javier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat (2021-04)
Article
Accés obertResistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commerciali ... -
Shape-shifting digital hardware concept: towards a new adaptive computing system
Rubio Sola, Jose Antonio; García Almudéver, Carmen; Martin, Javier; Crespo, A.; Rodriguez, Rosa; Nafría Maqueda, Montserrat (IEEE Press. Institute of Electrical and Electronics Engineers, 2012)
Comunicació de congrés
Accés restringit per política de l'editorialIn this paper a new approach to implement adaptive hardware (AH) based on memFETs crossbar structure is presented. We report a novel computing hardware principle called Shape-Shifting Digital Hardware (SSDH) oriented ... -
Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells
Martinez, Javier; Rodriguez, Rosa; Nafría Maqueda, Montserrat; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio (Institute of Electrical and Electronics Engineers (IEEE), 2017)
Text en actes de congrés
Accés restringit per política de l'editorialRandom Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is ... -
Stochastic resonance effect in binary STDP performed by RRAM devices
Salvador Aguilera, Emili; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Crespo Yepes, Albert; Miranda Castellano, Enrique Alberto; Nafría Maqueda, Montserrat; Rubio Sola, Jose Antonio; Ntinas, Vasileios; Sirakoulis, Georgios Ch. (Institute of Electrical and Electronics Engineers (IEEE), 2022)
Text en actes de congrés
Accés obertThe beneficial role of noise in the binary spike time dependent plasticity (STDP) learning rule, when implemented with memristors, is experimentally analyzed. The two memristor conductance states, which emulate the neuron ...